Relationship between Oxygen Defects and Properties of Scandium Oxide Films Prepared by Ion-Beam Sputtering

Kong, Pengfei; Pu, Yong; Ma, Ping; Zhu, Jiliang

doi:10.3390/coatings9080517

Cited by 9 publications

(4 citation statements)

References 32 publications

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“…In spite of this drastic difference in the composition of the films did not affect the amorphous characteristics of the resulting coatings as demonstrated by SEM and XRD, however, it had a high impact on the mechanical and optical properties of the three materials as it will be presented later on. [22], [23] 1.51 (RBTD) [14] PLD: pulsed laser deposition; ALD: atomic layer deposition; RMS: reactive magnetron sputtering; RBTD: reactive biased target sputtering deposition; IBS: ion beam sputtering; DE: direct evaporation; IBAD: ion beam assisted deposition.…”

Section: Compositional Studymentioning

confidence: 99%

“…Along with low index materials such as SiO2, though not widely studied, Sc2O3 has been demonstrated in dielectric interference-based mirror coatings developed for high-power ultraviolet (UV) lasers [21]. High optical coatings based on Sc2O3 have been successfully deposited by techniques, including IBS [22], [23], reactive magnetron sputtering (RMS) [24], pulsed laser deposition (PLD) [25], and reactive biased target sputtering deposition (RBTD) [14].…”

Section: Introductionmentioning

confidence: 99%

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Amorphous dielectric optical coatings deposited by plasma ion-assisted electron beam evaporation for gravitational wave detectors

Núñez¹,

Wallace

Fleming³

et al. 2023

Appl. Opt.

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Coating thermal noise (CTN) in amorphous coatings is a drawback hindering their application in precision experiments such as gravitational wave detectors (GWDs). Mirrors for GWDs are Bragg’s reflectors consisting of a bilayer-based stack of high- and low-refractive-index materials showing high reflectivity and low CTN. In this paper, we report the characterization of morphological, structural, optical, and mechanical properties of high-index materials such as scandium sesquioxide and hafnium dioxide and a low-index material such as magnesium fluoride deposited by plasma ion-assisted electron beam evaporation. We also evaluate their properties under different annealing treatments and discuss their potential for GWDs.

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Section: Compositional Studymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Amorphous dielectric optical coatings deposited by plasma ion-assisted electron beam evaporation for gravitational wave detectors

Núñez¹,

Wallace

Fleming³

et al. 2023

Appl. Opt.

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“…From Figure 3a,b, they show that the transmittance of the films in the visible light region is above 70%. With the increasing pressure, oxygen vacancy defects decrease, and the loss of light reduces, which leads to the enlargement of transmittance [23][24][25]. Besides, as the oxygen content continues to increase, the transmittance decreases.…”

Section: Optical Characterizationmentioning

confidence: 99%

The Investigation of Indium-Free Amorphous Zn-Al-Sn-O Thin Film Transistor Prepared by Magnetron Sputtering

Zhang

et al. 2021

Coatings

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The indium-free amorphous oxide semiconductor thin film transistor (AOS-TFT) with aluminum (Al) electrodes shows broad application prospects in new-generation display technologies, such as ultra-high definition large-screen display, OLED display and 3D display. In this work, the thin film transistor (TFT) with a zinc-aluminum-tin-oxide (ZATO) semiconductor as the active layer and an Al electrodes as the source and drain (S/D) was investigated. The optical, electrical and semiconductive properties of the ZATO films were evaluated by atomic force microscopy (AFM), ultraviolet–visible spectrophotometry and microwave photoconductivity decay (μ-PCD), respectively. The result shows that the film is smooth and transparent and has low localized states and defects at a moderate oxygen concentration (~5%) and a low sputtering gas pressure (~3 mTorr). After the analysis of the transfer and output characteristics, it can be concluded that the device exhibits an optimal performance at the 623 K annealing temperature with an Ion/Ioff ratio of 5.5 × 107, an SS value of 0.15 V/decade and a saturation mobility (μsat) of 3.73 cm2·V−1·s−1. The ZATO TFT at the 623 K annealing has a −8.01 V negative shift under the −20 V NBS and a 2.66 V positive shift under the 20 V PBS.

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“…The sputtering deposited CeO 2−x has numerous oxygen vacancies (V o ) within the material layer. Many V o are moved by the electrical force to switch the state of the channel [ 53 , 54 , 55 ]. However, an excess of vacancies can eventually cause a leakage current from the gate to the source.…”

Section: Introductionmentioning

confidence: 99%

Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices

et al. 2023

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A three-terminal synaptic transistor enables more accurate controllability over the conductance compared with traditional two-terminal synaptic devices for the synaptic devices in hardware-oriented neuromorphic systems. In this work, we fabricated IGZO-based three-terminal devices comprising HfAlOx and CeOx layers to demonstrate the synaptic operations. The chemical compositions and thicknesses of the devices were verified by transmission electron microscopy and energy dispersive spectroscopy in cooperation. The excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), short-term potentiation (STP), and short-term depression (STD) of the synaptic devices were realized for the short-term memory behaviors. The IGZO-based three-terminal synaptic transistor could thus be controlled appropriately by the amplitude, width, and interval time of the pulses for implementing the neuromorphic systems.

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Relationship between Oxygen Defects and Properties of Scandium Oxide Films Prepared by Ion-Beam Sputtering

Cited by 9 publications

References 32 publications

Amorphous dielectric optical coatings deposited by plasma ion-assisted electron beam evaporation for gravitational wave detectors

Amorphous dielectric optical coatings deposited by plasma ion-assisted electron beam evaporation for gravitational wave detectors

The Investigation of Indium-Free Amorphous Zn-Al-Sn-O Thin Film Transistor Prepared by Magnetron Sputtering

Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices

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