Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices

Abstract

A three-terminal synaptic transistor enables more accurate controllability over the conductance compared with traditional two-terminal synaptic devices for the synaptic devices in hardware-oriented neuromorphic systems. In this work, we fabricated IGZO-based three-terminal devices comprising HfAlOx and CeOx layers to demonstrate the synaptic operations. The chemical compositions and thicknesses of the devices were verified by transmission electron microscopy and energy dispersive spectroscopy in cooperation. The excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), short-term potentiation (STP), and short-term depression (STD) of the synaptic devices were realized for the short-term memory behaviors. The IGZO-based three-terminal synaptic transistor could thus be controlled appropriately by the amplitude, width, and interval time of the pulses for implementing the neuromorphic systems.

In2O3/ZnO heterojunction thin film transistor for high recognition accuracy neuromorphic computing and optoelectronic artificial synapses

“…Compared to dual-ended memristors, three-terminal devices offer better controllability of synaptic weights by regulating channels through gate voltage. They also exhibit low read/write currents, efficient read operations, parallel writes, and effectively avoid crosstalk issues [5]. This makes them superior for integration into artificial neural networks and enables better neural morphology simulation.…”

Lateral Heterostructures of WS2 and MoS2 Monolayers for Photo-Synaptic Transistor

“…However, two-terminal synaptic devices are limited in their ability to emulate biological synaptic functions because their structural limitations prevent them from simultaneously performing signal transmission and learning operations. [9][10][11] Furthermore, they present substantial reliability challenges, especially in terms of retention and endurance.…”