Transcutaneous energy transfer (TET) systems use magnetic fields to transfer power across the skin without direct electrical connectivity. This offers the prospect of lifetime operation and overcomes risk of infection associated with wires passing through the skin. Previous attempts at this technology have not proved suitable due to poor efficiency, large size, or tissue damage. We have developed a novel approach utilizing frequency control that allows for wide tolerance in the alignment between internal and external coils for coupling variations of 10 to 20 mm, and relatively small size (50 mm diameter, 5 mm thickness). Using a sheep experimental model, the secondary coil was implanted under the skin in six sheep, and the system was operated to deliver a stable power output to a 15 W load continuously over 4 weeks. The maximum surface temperature of the secondary coil increased by a mean value of 3.4 +/- 0.4 degrees C (+/-SEM). The highest absolute mean temperature was 38.3 degrees C. The mean temperature rise 20 mm from the secondary coil was 0.8 +/- 0.1 degrees C. The efficiency of the system exceeded 80% across a wide range of coil orientations. Histological analysis revealed no evidence of tissue necrosis or damage after four weeks of operation. We conclude that this technology is able to offer robust transfer of power to implantable devices without excess heating causing tissue damage.
Aiming at the problem of serious switching loss in high-power and high-voltage occasions, the traditional LLC resonant network is difficult to adapt, the DC gain is difficult to obtain intuitively, and the voltage stress on the switch is too high, resulting in large switching losses and difficult selection of the switch. This paper uses a three-level full-bridge LLC resonant converter topology, the First Harmonic Approximation (FHA) is used to analyze the LLC resonant converter gain characteristics, and the parameter design ideas are given. A simulation experiment of a three-level full-bridge LLC resonant converter based on frequency modulation control is presented. The simulation results show that each primary side switch transistor can achieve zero voltage switching (ZVS), the secondary side diode realizes zero current switching (ZCS), and can obtain higher working efficiency, which verifies the feasibility of the design.
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