We report epitaxial growth of TiN films having low resistivity on (100) silicon substrates using pulsed laser deposition method. The TiN films were characterized using x-ray diffraction, Rutherford backscattering, four-point-probe ac resistivity, high resolution transmission electron microscopy and scanning electron microscopy techniques and epitaxial relationship was found to be 〈100〉 TiN ∥ 〈100〉 Si. TiN films showed 10%–20% channeling yield. In the plane, four unit cells of TiN match with three unit cells of silicon with less than 4.0% misfit. This domain matching epitaxy provides a new mechanism of epitaxial growth in systems with large lattice misfits. Four-point-probe measurements show characteristic metallic behavior of these films as a function of temperature with a typical resistivity of about 15 μΩ cm at room temperature. Implications of low-resistivity epitaxial TiN in silicon device fabrication are discussed.

Using pulsed laser deposition, YBa2Cu3O7−δ (YBCO) films ranging in thickness from 0.065 to 6.4 μm have been deposited on yttria-stabilized zirconia substrates with an intermediate layer of CeO2. The thinnest films have critical current densities of over 5 MA/cm2 at 75 K with zero applied field; as film thickness is increased, Jc decreases asymptotically to 1 MA/cm2. X-ray analysis of a 2.2-μm-thick film shows that the YBCO is predominantly c-axis oriented and textured in-plane, while a Rutherford backscattering spectrometry minimum channeling yield of ≊75% indicates that the film contains disordered material at this thickness.

High current YBa2Cu3O7−δ (YBCO) thick films on flexible nickel substrates with textured buffer layers were fabricated. Highly textured yttria-stabilized-zirconia buffer layers were deposited by using ion beam assisted deposition (IBAD). Pulsed laser deposited YBCO films were not only c-axis oriented with respect to the film surface but also strongly in-plane textured. The in-plane mosaic spread of YBCO films was ∼10°. A critical current density of 8×105 A/cm2 was obtained at 75 K and zero field for thin YBCO films. It was also demonstrated that thick YBCO films with a high critical current and excellent magnetic field dependence at liquid nitrogen temperature can be obtained on flexible nickel substrates by using the textured buffer layers. The result indicates that thick film technology in combination with IBAD buffer layers could be a viable method for fabricating YBCO tapes in long lengths.

Effect of oxygen vacancies on the electronic structure and transport properties of SrRuO3 thin films J. Appl. Phys. 113, 17E125 (2013); 10.1063/1.4795011Microstructure dependence of electrical properties of (Ba0.5Sr0.5)TiO3 thin films deposited on Pt/SiO2/Si Preparation of thinfilm (Ba0.5,Sr0.5)TiO3 by the laser ablation technique and electrical properties

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Measurements of hydrogen loss and luminescence as a function of annealing temperature in porous silicon suggest that luminescence is attributable to electron-hole recombination in SiOx surface layers with an intensity that is dependent upon the surface hydrogen content. The luminescence is composed of three Gaussian bands similar to those found in amorphous SiO2. X-ray photoelectron spectroscopy and scanning electron microscopy show porous silicon has SiOx on the surface, which is comprised of many particles of about 10 nm size. Collectively, the data strongly support the previously proposed quantum confinement/luminescence center model.

We have prepared high-quality, single crystals of SmB 6 under various conditions to improve sample quality. We have measured the resistivity and magnetic susceptibility from room to liquid-helium temperatures to sort samples. We have applied pulsed magnetic fields as high as 50 T at temperatures as low as 40 mK while measuring resistivity. Our samples are of higher quality than previously known. All solvent-grown, single-crystal samples should be etched to remove a surface conductivity.

We have investigated the formation of textured and epitaxial metallic films on (100) MgO single crystals substrates (lattice constant a=4.21 Å) as a function of deposition temperature during pulsed laser ablation. Platinum (a=3.92 Å) films on MgO with lattice misfit of 7.4% were found to grow epitaxially in the temperature range 500–700 °C. Three-dimensional x-ray diffraction results (theta, phi, and chi scans) show 〈100〉 epitaxy with the alignment of all three cube axes. Rutherford backscattering and channeling measurements on a film deposited at 700 °C showed a minimum yield of 2.2%, which is very close to the defect-free single crystal value. In the temperature range 200–500 °C both 〈100〉 and 〈111〉 textures were observed. The 〈111〉 oriented (normal to the surface) films were random in the plane of the substrate, whereas 〈100〉 crystallites were epitaxial. Below 200 °C, only 〈111〉 crystallites were observed. The 〈111〉 texture of platinum films is also observed when grown on amorphous substrates such as SiO2. The experimental results are normalized with theoretical simulations addressing the minimization of film energy.