Structural and electrical properties of Ba0.5Sr0.5TiO3 thin films with conductive SrRuO3 bottom electrodes

Jia, Quanxi; Wu, X. D.; Foltyn, S. R.; Tiwari, P.

doi:10.1063/1.113945

Cited by 143 publications

(33 citation statements)

References 9 publications

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“…For the sample measured here, a dielectric constant of 1058 at zero bias, a tunability of 44.8%, a maximum dielectric loss of 0.0092 and the value down to 0.0068 by applying an electric field of 100 kV/cm, and a FOM factor of 49 are achieved at room temperature. Our obtained data are remarkably superior to the reported results that were measured with the identical capacitor configuration of Ag/BST/SRO [4]. As shown in the figure, the maximum values of the dielectric constant were different relying on the voltagesweeping direction.…”

Section: Resultscontrasting

confidence: 67%

“…These drawbacks may limit the usage of cuprate superconductors for electrode applications. Unlike most oxide superconductors, highly conductive metallic oxide SrRuO 3 is stable not only in oxidizing but also in inert gas atmospheres up to quite high temperatures [3][4][5]. High stability of the bottom electrode and processing compatibility with ultra-large-scale-integrated circuit fabrication during electrode deposition are very important to realize the integration between high dielectric materials and active devices located on the substrates.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Structural and electrical properties of epitaxial Ba0.5Sr0.5TiO3/SrRuO3 heterostructures grown by pulsed laser deposition

Zhu

Zheng

Peng

et al. 2004

Journal of Crystal Growth

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Section: Resultscontrasting

confidence: 67%

Section: Introductionmentioning

confidence: 99%

Structural and electrical properties of epitaxial Ba0.5Sr0.5TiO3/SrRuO3 heterostructures grown by pulsed laser deposition

Zhu

Zheng

Peng

et al. 2004

Journal of Crystal Growth

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“…The first two mechanisms are driven by electronic instabilities of the octahedral metal ion as exemplified by the Jahn-Teller distortion in KCuF 3 or the ferroelectric displacement of titanium in BaTiO 3 . [7,8] The third and most common mechanism, octahedral tilting, can be realized by tilting essentially rigid BO 6 octahedra while maintaining their corner-sharing connectivity.…”

mentioning

confidence: 99%

Phase‐Transition Temperatures of Strained Single‐Crystal SrRuO₃ Thin Films

et al. 2010

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SrRuO 3 (SRO) is widely used as an electrode in oxide electronic device applications due to its excellent material properties such as metallic conductivity, chemical stability, good lattice match with multifunctional oxides, and atomically smooth and welldefined surfaces. [1][2][3][4][5][6] Especially in the fabrication of epitaxial thin-film heterostructures, the crystal symmetry and domain structure of the overlayer thin film are strongly dependent on those of the bottom electrode. Thus, it is critical to investigate the crystal symmetry and domain structure of the bottom electrode at the growth temperature and during cooling of the epitaxial heterostructures to room temperature if the bottom electrode undergoes structural transitions.In ABO 3 perovskite materials, the ideal cubic symmetry can be distorted by several mechanisms such as distortions of the octahedra, cation displacements within the octahedra, and tilting of the octahedra. The first two mechanisms are driven by electronic instabilities of the octahedral metal ion as exemplified by the Jahn-Teller distortion in KCuF 3 or the ferroelectric displacement of titanium in BaTiO 3 . [7,8] The third and most common mechanism, octahedral tilting, can be realized by tilting essentially rigid BO 6 octahedra while maintaining their corner-sharing connectivity. This type of distortion is typically observed when the A cation is too small for the cubic BO 3 corner-sharing octahedral network.At room temperature bulk SRO exhibits orthorhombic symmetry (Pbnm).[9] Figure 1 shows the sequence of phase transitions in unstrained bulk SRO from orthorhombic to tetragonal and then cubic symmetry with increasing temperature.[10] According to the Glazer notation, octahedral tilting in orthorhombic SRO is described by a À a À c þ , implying that RuO 6 octahedra are rotated in opposite directions by equivalent magnitude along [100] and [010] and in the same direction about [001]. [11,12] Tetragonal SRO is a one-tilt system, where RuO 6 octahedra are rotated only about the [001] direction (a 0 a 0 c À ). The tetragonal phase of SRO is stable within the very narrow temperature range from 547 to 677 8C and, finally, high-symmetry cubic perovskite (Pm3m) becomes stable above 677 8C.[10]Enormous strains exist in thin films when one material is deposited onto a substrate due to differences in crystal symmetry, lattice parameters, and thermal expansion coefficients between the film and the underlying substrate. [2,14] As a result, the properties of thin films can be differ widely from the intrinsic properties of the unstrained bulk counterparts. For example, recent experiments have shown strain-induced ferroelectricity in SrTiO 3 (STO) films at room temperature [15] and huge changes in the ferroelectric transition temperature in both BaTiO 3 . [16] Several groups have reported on the structural phase transition of SRO in thin-film form. The structural transition temperature of an epitaxial SRO thin film on (001) STO substrates, investigated using in situ transmission electron micro...

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“…Recently, the great interest in thin films of ferroelectrics, high temperature superconductors or semiconductors for group III nitrides (such as GaN or AlN) epitaxial layers has made the problem of a suitable substrate an important and a lot of studies have been undertaken to find a suitable substrate [1,2]. Lanthanide oxide materials (Ln = La, Pr and Nd) have shown promise due to lattice matching and have been employed as the substrate layers.…”

Section: Introductionmentioning

confidence: 99%

Investigation of epitaxial LaNiO3−x thin films by high-energy XPS

Mickevičius¹,

Grebinskij²,

Bondarenka³

et al. 2006

Journal of Alloys and Compounds

191

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Epitaxial thin films of LaNiO 3−x were deposited by using a reactive d.c. magnetron sputtering technique. High-energy X-ray photoelectron spectroscopy was used to analyze the composition and valence states of La and Ni in the films after long time aging in atmosphere. The obtained results show the existence lanthanum and nickel in oxide and hydroxide chemical states. The oxygen exists in four chemical states: lattice oxides, hydroxyl groups and in adsorbed water. Comparison of the spectra recorded at normal emission and grazing emission angle revealed that the hydroxyl group's concentration is mostly present at the surface of the film.

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Structural and electrical properties of Ba0.5Sr0.5TiO3 thin films with conductive SrRuO3 bottom electrodes

Cited by 143 publications

References 9 publications

Structural and electrical properties of epitaxial Ba0.5Sr0.5TiO3/SrRuO3 heterostructures grown by pulsed laser deposition

Structural and electrical properties of epitaxial Ba0.5Sr0.5TiO3/SrRuO3 heterostructures grown by pulsed laser deposition

Phase‐Transition Temperatures of Strained Single‐Crystal SrRuO₃ Thin Films

Investigation of epitaxial LaNiO3−x thin films by high-energy XPS

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Structural and electrical properties of Ba0.5Sr0.5TiO3 thin films with conductive SrRuO3 bottom electrodes

Cited by 143 publications

References 9 publications

Structural and electrical properties of epitaxial Ba0.5Sr0.5TiO3/SrRuO3 heterostructures grown by pulsed laser deposition

Structural and electrical properties of epitaxial Ba0.5Sr0.5TiO3/SrRuO3 heterostructures grown by pulsed laser deposition

Phase‐Transition Temperatures of Strained Single‐Crystal SrRuO3 Thin Films

Investigation of epitaxial LaNiO3−x thin films by high-energy XPS

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Phase‐Transition Temperatures of Strained Single‐Crystal SrRuO₃ Thin Films