Aluminum nitride thin films have been grown epitaxially on Si(111) substrates, for the first time, by pulsed laser ablation of sintered AlN target. The influence of process parameters such as laser energy density, substrate temperature, pulse repetition rate, nitrogen partial pressure, etc. on epitaxial growth has been investigated to obtain high quality AlN films. These films were characterized by Fourier transform infrared spectroscopy, Raman spectroscopy, x-ray diffraction (Θ and ω scans) technique, high resolution transmission electron microscopy, and scanning electron microscopy. The films deposited at laser energy density in the range of 2–3 J/cm2, substrate temperature of 750 °C, and base pressure of 3×10−7 Torr are single phase and highly oriented along c axis normal to the Si(111) planes. The results of x-ray diffraction and electron microscopy on these films clearly show the epitaxial growth of the AlN films with an orientational relationship of AlN[0001] ∥ Si[111] and AlN[21̄1̄0] ∥ Si[011̄]. The AlN/Si interface was found to be quite sharp without any indication of interfacial reaction. Laser physical vapor deposition is shown to produce high quality epitaxial AlN films with smooth surface morphology when deposited under optimized conditions.
A laser method based upon carbon ion implantation and pulsed laser melting of copper has been used to produce continuous diamond thin film. Carbon ions were implanted with ion energies in the range of 60 to 120 keV, and doses of 1.0 x 10(18) to 2.0 x 10(18) ions cm(-2). The ion-implanted specimens were treated with nanosecond excimer laser pulses with the following parameters: energy density, 3.0 to 5.0 J cm(-2); wavelength, 0.308 microm; pulse width, 45 nanoseconds. The specimens were characterized with scanning electron microscopy (SEM), x-ray diffraction, Rutherford backscattering/ion channeling, Auger, and Raman spectroscopy. The macroscopic Raman spectra contained a strong peak at 1332 cm(-1) with full width at half maximum of 5 cm(-1), which is very close to the quality of the spectra obtained from single-crystal diamond. The selected area electron diffraction patterns and imaging confirmed the films to be defect-free single crystal over large areas of up to several square micrometers with no grain boundaries. Low voltage SEM imaging of surface features indicated the film to be continuous with presence of growth steps.
This paper presents the role of basin-edge geometry in the generation of surface waves using 2.5-D modelling. The simulated responses of various basin-edge models revealed surface wave generation near the basin edge and their propagation normal to the edge. Seismic responses of basin-edge models using different fundamental frequency of soil along with spectral analysis of differential ground motion confirmed that surface waves start generating near the basin edge when body-wave frequency exceeds the fundamental frequency of soil. Spectral analysis of differential ground motion also confirmed the generation of high frequency surface wave. An increase of surface-wave amplitude with soil thickness was obtained. Large ground displacement observed near the basin edge may be due to the interference of surface/diffracted waves with the direct waves and their multiples. The effect of edge roughness on the surface-wave characteristics was found to be negligible as compared with the edge geometry. Simulated results revealed a decrease of surface-wave amplitude with edge slope, particularly in the case of surface waves caused by S waves. Surface wave generation near the basin edge was obtained for all four considered angles of incidence. At the same time, it was also inferred that the characteristics of these surface waves depend on the angle of incidence to some extent. The findings of this paper reveal that basin-edge effects deserve a particular attention for the purpose of earthquake-resistant design and seismic microzonation.
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