The structural, optical, and electrical properties of zinc oxide (ZnO) layers manufactured at different process conditions were investigated. ZnO epitaxial layers were grown on silicon, glass, and ITO/glass substrates by pulsed laser deposition (PLD) technique. The influence of power beam, substrate temperature, and deposition time on films properties was analysed. Morphological features of the film surface were investigated by scanning electron microscopy. A structural study shown planar orientation of films at low temperatures of substrate, but the columnar type of growth originated in temperature enhances. Electrical properties were determined in the temperature range 300–500 K. It was shown that the type of films conductivity is metallic and it is limited by charge transfer across grain boundaries.

Multilayer nanospheres with alternating 2H-MoS2 and C layers were studied as a cathode base for lithium power sources. Interesting hierarchical structure, synergetic effect, and the presence of defects as supplementary active sites, introduced by the additional annealing at 773 K in Ar atmosphere, have determined the conductivity, referred to symmetric hopping or random barrier model, and led to achieve the high values of specific capacity of 3700, 1390, and 790 A h kg−1 at currents 0.1, 0.3, and 0.5 C. Such unusual result was never reported before and could be explained by combining of the faradaic and non-faradaic accumulation processes within electrode material.

No abstract

No abstract

No abstract

No abstract

No abstract

No abstract