RHEED study of CdTe and HgCdTe thin films grown on Si by pulse laser deposition

Sagan, P.; Wisz, G.; Bester, Mariusz; Rudyj, I. O.; Курило, И. В.; Lopatynskij, I.E.; Virt, І. S.; Kuźma, M.; Ciach, R.

doi:10.1016/j.tsf.2004.11.016

Cited by 12 publications

(4 citation statements)

References 15 publications

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“…The most important practical advantages of this method are: low substrate temperature, good adhesion, high deposition rate, a relatively wide energy range of particles (1-1000 eV). A simplicity of PLA technique was successfully applied for II-VI compounds such as CdTe, HgCdTe, CdS, ZnS, and ZnTe [4,5].…”

Section: Sample Preparationmentioning

confidence: 99%

Properties of ZnO and ZnMnO Thin Films Obtained by Pulsed Laser Ablation

et al. 2010

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The results of experimental investigation of structural and physical properties of ZnO and ZnMnO films are presented in this work. The films of ZnO and Zn1−xMnxO of different thickness were obtained on Al2O3, glass, and KCl substrates in vacuum of 1 × 10 −5 Torr by the pulsed laser deposition method. The samples were obtained under the substrate temperature 300-473 K. A thickness of films was in the range of 0.5-1 µm depending on the number of laser pulses. The structure of target bulk materials was investigated by X-ray diffraction method. A structure of laser deposited films was investigated by the transmission high-energy electron diffraction method. Electric resistivity was measured in the temperature range 77-450 K. The presence of two activation energies in the temperature range 300-330 K and 330-450 K is followed from the analysis of the films electrical resistivity. These activation energies correspond to two deep donor's energy levels. The shallow donor's level is connected with manganese presence. Optical transmission of ZnO and ZnMnO films deposited at various temperatures were investigated.

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Section: Sample Preparationmentioning

confidence: 99%

Properties of ZnO and ZnMnO Thin Films Obtained by Pulsed Laser Ablation

et al. 2010

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“…Sagan et al studied reflection high-energy electron diffraction (RHEED) pattern of CdTe and HgCdTe thin films grown on Si by pulse laser deposition [3]. Solanki et al described a process of transferring thin porous silicon layers (PSL) onto a ceramic substrate like alumina [4]. Powalla et al assessed that all existing thin-film PV technologies, especially the Cu(In,Ga)Se2 (CIGS)-based technology, have a high cost reduction potential at high production volumes projecting futuristic challenge to combine high production volumes with Vol.…”

Section: A Thin Films Technologymentioning

confidence: 99%

Numerical Simulation for Enhancement of output Performance of WS2 based Thin Film Solar Cells

Khan¹,

Tecnology.Peshawar²,

Rashid³

et al. 2020

IJEW

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In this paper , Tungsten Disulfide is utilized for the development of an efficient model, using SCAPS one dimensional Simulator. Performance of the developed model is compared with other thin film solar cells currently under study. An efficient solar cell model with comparable photovoltaic parameters to the recent thin film models is obtained. Taking ZnO window layer material, ZnSe as buffer layer material, WS2 as absorption layer material and Mg as back surface field with back reflector a 20% efficient, design with 0.9Voc, 25 mA/cm2 current density and fill factor of 85% is developed.

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“…Compared to these epitaxial methods, pulsed laser deposition (PLD) is a very promising technique [6]. Many research groups have obtained HgCdTe thin films by this method [7][8][9], and have investigated the effects on the different technological aspects and properties of PLD HgCdTe thin films, such as different Si substrates [10], substrate temperature [11], electrical properties [10], crystalline properties [11,12], etc. The quality, compositions and crystallographic orientations of HgCdTe thin films obtained by PLD depend strongly on the parameters during deposition.…”

Section: Introductionmentioning

confidence: 99%