Defects of crystal structure of Hg1−xCdxTe thin layers growing by pulsed laser deposition

Defects of the crystal structure of Hg1−Cd Te thin layer grown by pulsed laser deposition

“…Monocrystal KCl cleaved in plane (0 0 1) was used as a substrate. The laser parameters and conditions for thin films deposition are described in paper [10]. which give rise to two equivalent diffraction patterns (each having six-fold symmetry) one 30 • rotated in relation to other [10].…”

“…The laser parameters and conditions for thin films deposition are described in paper [10]. which give rise to two equivalent diffraction patterns (each having six-fold symmetry) one 30 • rotated in relation to other [10]. Besides the rings described above there are additional Debye rings, (1 1 1), (2 2 2) 1 1), (1 1 1), (1 1 1), (1 1 1).…”

“…Thin films of the solid solution of Hg 1−x Cd x Te, which are the base material for production of the infrared detectors [5], were obtained by PLD [6,7]. In this work thin films of Hg 1−x Cd x Te obtained by the PLD method [8][9][10] were investigated by transmission electron diffraction.…”

Effect of target–substrate separation on HgCdTe films formed by pulsed laser deposition

“…Compared to these epitaxial methods, pulsed laser deposition (PLD) is a very promising technique [6]. Many research groups have obtained HgCdTe thin films by this method [7][8][9], and have investigated the effects on the different technological aspects and properties of PLD HgCdTe thin films, such as different Si substrates [10], substrate temperature [11], electrical properties [10], crystalline properties [11,12], etc. The quality, compositions and crystallographic orientations of HgCdTe thin films obtained by PLD depend strongly on the parameters during deposition.…”