P. B. Joyce scite author profile

The effects of GaAs overgrowth on the structural properties of large low-growth-rate InAs quantum dots (LGR-QDs) grown on GaAs(001) are examined using in situ scanning tunneling microscopy. Strongly anisotropic surface diffusion produces a characteristic valley-ridge structure above the LGR-QDs and the surface is not planarized even after a cap thickness >400 Å. The evolution of surface morphology proceeds very differently to the case of smaller conventional growth rate QDs capped under the same conditions, due to the different initial strain states of the QDs.

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Scaling behavior in InAs/GaAs(001) quantum-dot formation

Krzyzewski

Joyce

Bell

et al. 2002

Phys. Rev. B

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Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots

et al. 2001

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Growth rate effects on the size, composition and optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy

Joyce¹,

Krzyzewski²,

Bell³

et al. 2001

Journal of Crystal Growth

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Understanding the growth mode transition in InAs/GaAs(001) quantum dot formation

et al. 2003

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P. B. Joyce

Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying

Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy

Optimizing the growth of 1.3 μm InAs/GaAs quantum dots

Surface morphology evolution during the overgrowth of large InAs–GaAs quantum dots

Scaling behavior in InAs/GaAs(001) quantum-dot formation

Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots

Growth rate effects on the size, composition and optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy

Understanding the growth mode transition in InAs/GaAs(001) quantum dot formation

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