Growth rate effects on the size, composition and optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy

Growth interruption to tune the emission of InAs quantum dots embedded in InGaAs matrix in the long wavelength region

“…In fact, the increase in the size and the decrease in the In content of the QDs lead to a reduction of the confinement potentials for carriers in QDs and to a shift of their energy levels towards lower values [7,8]. Emission wavelenghts above 1.0 mm with a small full width at half maximum (FWHM), typically 25-30 meV, have been obtained by decreasing the deposition rate [9,10], the arsenic pressure [11,12] and by increasing the substrate temperature (>500 C) [11]. Another growth parameter widely used in literature to tune the QD emission by controlling the QD size has been the growth interruption (GI).…”

Quantum coherence in semiconductor nanostructures for improved lasers and detectors.

“…The larger QDs are formed at low growth rates and have smaller ground state energies than the smaller QD formed at higher InAs growth rates as shown in Figure 11b. [37] The trend of higher QD density at higher growth rate is observed in the factor of five increase in the RT PL intensity observed for the two samples grown at the highest growth rates (Spectra 1 and 2). [38,39] The effect of AsH 3 partial pressure on the QD growth was evaluated at 500°C for 6 Å of…”

The impact of growth parameters on the formation of InAs quantum dots on GaAs(100) by MOCVD

“…The larger QDs are formed at low growth rates and have smaller ground state energies than the smaller QD formed at higher InAs growth rates as shown in Fig. 4b [12].The trend of higher QD density at higher growth rate is observed in the factor of five increase in the RT PL intensity observed for the two samples grown at the highest growth rates (Spectra 1 and 2) [13,14].…”