Scaling behavior in InAs/GaAs(001) quantum-dot formation

Krzyzewski, T. J.; Joyce, P. B.; Bell, Gavin R.; Jones, T. S.

doi:10.1103/physrevb.66.201302

Cited by 55 publications

(60 citation statements)

References 19 publications

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“…In order to increase the emission wavelength of InAs/GaAs QDs to the telecommunication range ͑1.31-1.55 m͒, the QD layers needed to be formed as substantially larger islands compared to the first generation of QD laser devices. 1,2 Large QDs can be directly synthesized by overgrowth ͑i.e., supplying material well beyond the onset of nucleation͒, 7 by controlling the epitaxial growth conditions 8,9 or by growing on higher-index surfaces. 10,11 Metamorphic buffer layers have been used to this effect.…”

Section: Role Of Segregation In Inas/gaas Quantum Dot Structures Cappmentioning

confidence: 99%

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

et al. 2009

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Please check the document version of this publication:• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: We report a combined experimental and theoretical analysis of Sb and In segregation during the epitaxial growth of InAs self-assembled quantum dot structures covered with a GaSbAs strain-reducing capping layer. Cross-sectional scanning tunneling microscopy shows strong Sb and In segregation which extends through the GaAsSb and into the GaAs matrix. We compare various existing models used to describe the exchange of group III and V atoms in semiconductors and conclude that commonly used methods that only consider segregation between two adjacent monolayers are insufficient to describe the experimental observations. We show that a three-layer model originally proposed for the SiGe system ͓D. J. Godbey and M. G. Ancona, J. Vac. Sci. Technol. A 15, 976 ͑1997͔͒ is instead capable of correctly describing the extended diffusion of both In and Sb atoms. Using atomistic modeling, we present strain maps of the quantum dot structures that show the propagation of the strain into the GaAs region is strongly affected by the shape and composition of the strain-reduction layer.

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Section: Role Of Segregation In Inas/gaas Quantum Dot Structures Cappmentioning

confidence: 99%

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

et al. 2009

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“…The steady and gentle increase observable for coverages higher than 1.8 ML is due to the dependence of the density saturation value on growth rate. [17,18,19] In this region the density is of the order of 6 × 10 10 cm −2 .…”

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“…1 (a) and (b)) by reason of a favorable strain condition at those sites. They have been reported several times [10,11,13,14,15] and often been indicated as simple precursors of large QDs. We have already pointed out [13] that this simple picture is unrealistic and we will show below that the process involves a more complex kinetic mechanism.…”

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“…Because the system evolves within a very narrow range of coverage around the critical thickness, [7,8,9,10,11] we took advantage of the intrinsic non-uniformity of the molecular beams to grow a single sample where the InAs film thickness varies continuously along the sample surface. In this way a snapshot of the QD evolution is available and the system can be studied for InAs coverage increments as low as 0.01 ML.…”

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How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs∕GaAs(001)

Arciprete

Placidi

Sessi

et al. 2006

Applied Physics Letters

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The two- to three-dimensional growth mode transition in the InAs∕GaAs(001) heterostructure has been investigated by means of atomic force microscopy. The kinetics of the density of three-dimensional islands indicates two transition onsets at 1.45 and 1.59 ML of InAs coverage, corresponding to two separate families, small and large dots. According to the scaling analysis and volume measurements, the transition between the two families of quantum dots and the explosive nucleation of the large ones is triggered by the erosion of the step edges.

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“…As a consequence, a high density of precursors coexists with QDs of different sizes for the samples grown without growth interruption. 16 The size dispersion results in the broad PL bands observed in these samples. Growth interruption improves the QD size distribution, but the improvement is completely different for the samples grown at different growth rates, probably due to the strong growth rate dependence of the QD size and density.…”

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Growth-interruption-induced low-density InAs quantum dots on GaAs

Chauvin

Patriarche³

et al. 2008

Journal of Applied Physics

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We investigate the use of growth interruption to obtain low-density InAs quantum dots ͑QDs͒ on GaAs. The process was realized by Ostwald-type ripening of a thin InAs layer. It was found that the optical properties of the QDs as a function of growth interruption strongly depend on InAs growth rate. By using this approach, a low density of QDs ͑4 dots/ m 2 ͒ with uniform size distribution was achieved. As compared to QDs grown without growth interruption, a larger energy separation between the QD confined levels was observed, suggesting a situation closer to the ideal zero-dimensional system. Combining with an InGaAs capping layer such as In-rich QDs enable 1.3 µm emission at 4 K. © 2008 American Institute of Physics. ͓DOI: 10.1063/1.3000483͔The growth optimization of self-assembled quantum dots ͑QDs͒ on GaAs has been focused first on the realization of low-threshold lasers. More recently, it has been demonstrated that QDs can be efficiently used as single-photon emitters for quantum cryptography applications 1,2 and growth efforts have been devoted to the fabrication of low-density QD samples to perform single dot spectroscopy. Fiber-based quantum communication applications require an emission wavelength in the 1.3 or 1.55 m transmission window. However, most studies have concentrated on QDs emitting in the Ͻ1 m range. This is due to the lower sensitivity of detectors and also to the difficulties in growing sparse and large enough QDs emitting in this spectral region. There are few reports of microphotoluminescence ͑micro-PL͒ and antibunching experiments based on 1.3 m InAs/GaAs QDs. 3,4 In particular, we demonstrated that a uniform distribution of low-density InAs QDs emitting at 1.3 m with high efficiency can be obtained by employing a combination of ultralow InAs growth rate and InGaAs capping layer. 5,6

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Scaling behavior in InAs/GaAs(001) quantum-dot formation

Cited by 55 publications

References 19 publications

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs∕GaAs(001)

Growth-interruption-induced low-density InAs quantum dots on GaAs

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