Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots

Joyce, P. B.; Krzyzewski, T. J.; Steans, P.H; Bell, Gavin R.; Neave, J.H.; Jones, T.S.

doi:10.1016/s0039-6028(01)01479-0

Cited by 81 publications

(37 citation statements)

References 29 publications

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“…The evolution of the RHEED pattern during capping the ͑In,Ga͒As QDs is very similar to the case of capping InAs QDs reported in Ref. 10. For deposition of only 0.5 MLs InAs on the 2 ML GaAs, we find complete rebuilding of the ͑In,Ga͒As QDs on the surface, indicated by the change of the RHEED pattern from weak streaky diffraction rods back to clear chevrons.…”

supporting

confidence: 86%

Leveling and rebuilding: An approach to improve the uniformity of (In,Ga)As quantum dots

Gong

Nötzel

Hamhuis

et al. 2002

Applied Physics Letters

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We report on an approach to improve the uniformity of a single layer of (In,Ga)As quantum dots (QDs) grown by molecular-beam epitaxy. The key concept of our approach is to level and rebuild the (In,Ga)As QDs during insertion of a short period GaAs/InAs superlattice between the (In,Ga)As QD layer and the GaAs capping layer. For optimized layer thickness and number of superlattice periods this process results in uniform (In,Ga)As QDs with narrow photoluminescence line width of 20 meV at 4.5 K.

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supporting

confidence: 86%

Leveling and rebuilding: An approach to improve the uniformity of (In,Ga)As quantum dots

Gong

Nötzel

Hamhuis

et al. 2002

Applied Physics Letters

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“…The RHEED pattern remains spotty after growth of the 0.9 nm GaAs. The QDs do not completely collapse during capping due to their large size and height for the growth at a high temperature, which has been reported for dots grown at a lower temperature 14 and is consistent with the stability of large dots formed at low growth rate. 15 During the annealing process, the RHEED pattern then changes from spotty to rather streaky, indicating significant change of the structure.…”

Section: ϫ5supporting

confidence: 88%

Effect of annealing on formation of self-assembled (In,Ga)As quantum wires on GaAs (100) by molecular beam epitaxy

Mano

Nötzel

Hamhuis

et al. 2002

Journal of Applied Physics

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The role of annealing for ͑In,Ga͒As self-organized quantum wire ͑QWR͒ formation on GaAs ͑100͒ during growth of ͑In,Ga͒As/GaAs superlattice ͑SL͒ structures is studied by x-ray diffraction ͑XRD͒, atomic force microscopy ͑AFM͒, and photoluminescence ͑PL͒ spectroscopy. XRD and AFM evidence that annealing after the supply of each layer of elongated ͑In,Ga͒As quantum dots ͑QDs͒ in the SL is the crucial process for QWR formation. We conclude that during annealing, the shape anisotropy of the QDs is enhanced due to anisotropic mass transport and the QDs become connected along the ͓0-11͔ direction. Strain reduction by In desorption, revealed by XRD and PL, which accompanies this process, then results in well defined, uniform QWR arrays by repetition in SL growth.

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“…It is well known that QDs can be strongly affected by the capping process, which usually dissolves the top of the dots and decreases their height. 20,21 The differences found in this study indicate that capping with GaAsSb reduces or completely suppresses QD decomposi- 12 In that case, it was pointed out that the smaller strain induced in the QDs during capping by GaAsSb compared to GaAs could be the main reason. 12 In the present study both InGaAs and GaAsSb are lattice-matched to InP so there are no differences in the strain.…”

Section: -2mentioning

confidence: 70%

Effect of a lattice-matched GaAsSb capping layer on the structural properties of InAs/InGaAs/InP quantum dots

Ulloa¹,

Koenraad²,

Bonnet-Eymard³

et al. 2010

Journal of Applied Physics

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. The influence of a lattice-matched GaAsSb capping layer on the structural properties of self-assembled InAs quantum dots ͑QDs͒ grown on InP substrates is studied on the atomic scale by cross-sectional scanning tunneling microscopy. While lattice-matched In 0.53 Ga 0.47 As-capped QDs are clearly truncated pyramids, GaAs 0.51 Sb 0.49 -capped QDs grown under the same conditions look like full pyramids and exhibit a larger height, indicating that capping with GaAsSb reduces dot decomposition. Since there are no differences in strain between the two capping layers, this behavior is most likely related to the surfactant effect of Sb, which stabilizes the growth front and avoids adatom migration.

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Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots

Cited by 81 publications

References 29 publications

Leveling and rebuilding: An approach to improve the uniformity of (In,Ga)As quantum dots

Leveling and rebuilding: An approach to improve the uniformity of (In,Ga)As quantum dots

Effect of annealing on formation of self-assembled (In,Ga)As quantum wires on GaAs (100) by molecular beam epitaxy

Effect of a lattice-matched GaAsSb capping layer on the structural properties of InAs/InGaAs/InP quantum dots

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