Effect of annealing on formation of self-assembled (In,Ga)As quantum wires on GaAs (100) by molecular beam epitaxy

Mano, Takaaki; Nötzel, R.; Hamhuis, G. J.; Eijkemans, TJ Tom; Wolter, J.H.

doi:10.1063/1.1506191

Cited by 28 publications

(15 citation statements)

References 20 publications

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“…The length of the arrays easily exceeds 3 m with a lateral periodicity of 140 nm, which agrees with the QWR periodicity determined from x-ray diffraction. 4 The ordering of the InAs QDs and, hence, the uniformity of the QWR template, improves with increasing number of SL periods, generating a well-defined lateral strain field modulation at the GaAs surface with sufficiently deep minima. Single InAs QDs are formed on this QWR template for reduced InAs thickness of 1.5 ML and a very low growth rate of 0.0007 nm/s.…”

Section: 5mentioning

confidence: 99%

“…The high-energy shift is due to the In desorption during template formation which is independently confirmed by x-ray diffraction. 4,5 When the PL of the QWR template vanishes around 100 K, the PL intensity of the QD arrays slightly increases ͓Fig. 9͑a͔͒, indicating thermally activated carrier transfer from the QWRs to the QDs.…”

Section: ϫ2mentioning

confidence: 99%

“…4,5 The improvement of the uniformity of the QWRs and related uniformity and accumulation of the anisotropic strain field in SL growth provides a well-defined template for the ordering of single InAs ͑Ref. 2͒ and ͑In,Ga͒As ͑Ref.…”

Section: Introductionmentioning

confidence: 99%

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Self-organized template formation for quantum dot ordering

Nötzel

Mano

Wolter

2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Ordered arrays of quantum dots ͑QDs͒ are created by self-organized anisotropic strain engineering of ͑In,Ga͒As/GaAs quantum wire ͑QWR͒ superlattice ͑SL͒ templates on exactly oriented GaAs ͑100͒ substrates by molecular beam epitaxy ͑MBE͒. The well-defined one-dimensional arrays of ͑In,Ga͒As QDs formed on top of these templates due to local strain recognition are of excellent structural and optical quality up to room temperature. The QD arrays thus allow for fundamental studies and device operation principles based on single-and multiple carrier-and photon-, and coherent quantum interference effects.

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Section: 5mentioning

confidence: 99%

Section: ϫ2mentioning

confidence: 99%

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Self-organized template formation for quantum dot ordering

Nötzel

Mano

Wolter

2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…10,15,16 The former causes the QWRs to be well-separated and the latter causes the QWRs to be uniform along their length. Hence, since the lateral periodicities of the QD arrays in the top, bottom, and slope areas are similar on the ͓0−11͔ mesas, it is evident that the generated type-A steps (parallel to ͓0−11͔) do not affect the strain-gradient-driven In migration along [011].…”

mentioning

confidence: 99%

Complex quantum dot arrays formed by combination of self-organized anisotropic strain engineering and step engineering on shallow patterned substrates

Mano

Nötzel

Zhou

et al. 2004

Journal of Applied Physics

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. (2005). Complex quantum dot arrays formed by combination of self-organized anisotropic strain engineering and step engineering on shallow patterned substrates. Journal of Applied Physics, 97(1), 014304-1/5. [014304]. DOI: 10.1063/1.1823578 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. One-dimensional (In,Ga)As quantum dot (QD) arrays are created on planar singular, vicinal, and shallow mesa-patterned GaAs (100) substrates by self-organized anisotropic strain engineering of an ͑In, Ga͒As/ GaAs quantum wire (QWR) superlattice template in molecular beam epitaxy. On planar singular substrates, highly uniform single QD arrays along ͓0−11͔ are formed. On shallow ͓0−11͔ and [011] stripe-patterned substrates, the generated type-A and -B steps distinctly affect the surface migration processes which are crucial for QWR template development, i.e., strain-gradient-driven In adatom migration along [011] and surface-reconstruction-induced Ga/ In adatom migration along ͓0−11͔. In the presence of both type-A and -B steps on vicinal substrates misoriented towards [101], the direction of adatom migration is altered to rotate the QD arrays. This establishes the relationship between self-organized anisotropic strain and step engineering, which is exploited on shallow zigzag-patterned substrates for the realization of complex QD arrays and networks with well-positioned bends and branches, exhibiting high structural and optical quality.

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“…5,6 Artificial patterning techniques, however, often introduce defects and irregularities in the QDs given by the spatial resolution of the lithography and etching steps which degrade the electronic and optical qualities. Recently we have introduced a concept for the lateral ordering of InGaAs QDs in linear arrays on planar GaAs ͑100͒ substrates by molecular beam epitaxy 7,8 and planar InP ͑100͒ substrates by chemical beam epitaxy ͑CBE͒, 9 on which we concentrate here. Based on anisotropic adatom surface migration and lateral and vertical strain correlations, wirelike InAs nanostructures are created during growth of an InAs/ InGaAsP superlattice ͑SL͒, which acts as a template for the formation of linear InAs QD arrays due to local strain field recognition.…”

mentioning

confidence: 99%