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The features of the non‐equilibrium field effect are investigated for silicon in the region of high majority carrier depletion and non‐equilibrium between the energy bands. The observed effects are a strong asymmetry of the amplitude dependence of conductivity with respect to the sign of the external field, a current‐pinch effect, and a strong dependence of the kinetics of field effect on field strength, temperature, and light intensity. A mechanism is proposed for the non‐equilibrium field effect in the depletion region which involves a strong retardation of screening by surface states at low temperatures and thus allows penetration of the field into the volume of the crystal. The experimental data agree quantitatively with the calculation.

Spectra of thermally stimulated charge release (TSCR) in SiSiO2 structures are investigated in the temperature range from 5 to 30 K under conditions of different polarities of the voltage applied. A set of levels in the range from 0.013 to 0.062 eV and from 0.036 to 0.071 eV is observed in the case of n‐type and p‐type silicon substrates, respectively. Effects of magnetic field and laser beam irradiation on TSCR spectra is studied. The TSCR. spectra observed are explained by recharging of traps located in the transitional region between SiO2 and Si. Such a recharging is assumed to be assisted by the effect of localized phonons.

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