Electroreflectance of InN Semimetallic Thin Films

Tyagai, V. A.; Snitko, O. V.; Evstigneev, A. M.; Krasiko, A. N.

doi:10.1002/pssb.2221030216

Cited by 22 publications

(21 citation statements)

References 9 publications

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“…The experimental results in Fig. 3 clearly show a large increase of the e ective mass with increasing electron concentration [19][20][21][22][23][24]. The results are reasonably well described by Eqs.…”

Section: Electronic Properties Of Innsupporting

confidence: 55%

Narrow band gap group III-nitride alloys

Walukiewicz

2004

Physica E: Low-dimensional Systems and Nanostructures

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Recent results on the properties of narrow gap group III-nitrides and their alloys are reviewed. It is shown that InN with the energy gap of 0:7 eV exhibits classical characteristics of a narrow gap semiconductor with strongly nonparabolic conduction band and an energy dependent electron e ective mass. With the new discovery, the direct band gaps of the group III-nitride alloys span an extremely wide energy range from near infrared in InN to deep ultraviolet in AlN o ering possibilities for new device applications of these materials. We also discuss properties of dilute group III-N-V alloys in which incorporation of a small amount of nitrogen results in a dramatic band gap reduction. All the unusual properties of the alloys are well described by a band anticrossing model that considers an interaction between localized nitrogen states and the extended states of the conduction band. ?

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Section: Electronic Properties Of Innsupporting

confidence: 55%

Narrow band gap group III-nitride alloys

Walukiewicz

2004

Physica E: Low-dimensional Systems and Nanostructures

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“…The mass was found to be 0.11 (the mass is given in units of the free-electron mass) in the samples grown earlier [29,30]. The value was also supported by theory [31,32].…”

Section: Physical Constantsmentioning

confidence: 83%

Electron mobility in indium nitride

Nag

2004

Journal of Crystal Growth

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“…6) However, other studies reported values ranging from 1.7 to 3.1 eV. 3,[7][8][9][10][11] The most commonly cited measurement on optical absorption is that of Tansley and Foley;12) they reported band gap energy of 1.89 eV at room temperature.…”

Section: Introductionmentioning

confidence: 99%