Interrelation between surface states and transition layer defects in Si-SiO2 structures

Lysenko, V. S.; Sytenko, T. N.; Snitko, O. V.; Zimenko, Vladislav I.; Nazarov, A. M.; Osiyuk, I. N.; Rudenko, Tamara; Tyagulskii, I. P.

doi:10.1016/0038-1098(86)90132-8

Cited by 18 publications

(15 citation statements)

References 9 publications

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“…The technique of low-temperature (5-30 K) TSCR is commonly used to obtain information about the electrical properties of the shallow defect centers which are attributed to the presence of strained and dangling bonds situated in the transition layers of the silicon-related interfaces [4,5]. Filling of the system of shallow hole traps was performed by application of the forward voltage bias to the structure at some fixed temperature called the filling temperature.…”

Section: Thermally Stimulated Measurements Of Charge Release Currentsmentioning

confidence: 99%

“…7. Raman spectra for the control unimplanted Si sample (curve 1) and for the samples implanted at room temperature (2), 150°C (3), 450°C (4) and 600°C (5). maximum concentration in the sample implanted at 450°C.…”

Section: E V +027 Ev Levelmentioning

confidence: 99%

“…It is known [5] that the TSCR current measurements at low temperatures provide us with information about the shallow centers near the silicon surface related to the presence of dangling Si bonds, Si-OH bonds and strained Si-Si bonds. It can be seen in the Table 1, that in the unimplanted sample the main contribution into the TSCR spectra is due to the level with activation energy of 23 meV.…”

Section: Shallow Defect Centers In Siliconmentioning

confidence: 99%

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Properties of SiGe/Si heterostructures fabricated by ion implantation technique

Gomeniuk¹

1999

Semicond. Phys. Quantum Electron. Optoelectron.

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A comprehensive electrical characterisation of the SiGe/Si heterostructures has been performed in the wide temperature range (10270 K). Four structures fabricated by the Ge + ion implantation technique at different substrate temperatures (room temperature, 150°C, 450°C and 600°C) have been studied. The diode I-V characteristics, thermally stimulated capacitance and currents were measured and the presence and parameters of shallow trap levels were determined in dependence on the substrate temperature. The sample implanted at 450°C shows the best diode operation reflecting the higher quality of the surface silicon layer as compared to RT-and 150°C-implanted samples. Implantation-induced mechanical stresses have been investigated by Raman spectroscopy. For the first time the cryogenic TSCR technique has been applied to this system which makes it possible to investigate strain in the silicon layer due to SiGe layer formation.

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Section: Thermally Stimulated Measurements Of Charge Release Currentsmentioning

confidence: 99%

Section: E V +027 Ev Levelmentioning

confidence: 99%

Section: Shallow Defect Centers In Siliconmentioning

confidence: 99%

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Properties of SiGe/Si heterostructures fabricated by ion implantation technique

Gomeniuk¹

1999

Semicond. Phys. Quantum Electron. Optoelectron.

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“…For example, RF plasma processing may cause enhanced defect annealing in the near surface of the silicon substrate [2][3][4][5] as well as at the silicondioxide/silicon (SiO 2 /Si) interface and within the oxide [1,7]. It has recently been shown [8] that such a treatment also leads to efficient removal of the positive charge generated in the buried oxide of SIMOX (separation-by-implanted-oxygen) by strong-field electron injection.…”

Section: Introductionmentioning

confidence: 97%

The effect of radio-frequency plasma treatment on the electroluminescent properties of violet light-emitting germanium implanted metal-oxide–semiconductor structures

Nazarov

Vovk

Osiyuk

et al. 2005

Materials Science and Engineering: B

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“…The structural disorder in the transition layer leads to appearance of shallow centres in the dielectric [9]. Measurements of thermally stimulated charge release (TSCR) currents carried out in MOS structure [10,11,12] have shown that two systems of transition layer centres exist near conduction and valence band edges. The carrier exchange between them and the respective allowed silicon bands is controlled by a tunnel-activation mechanism.…”

Section: Introductionmentioning

confidence: 99%