“…At the beginning of the 1970s, the researches of the lowenergy plasma-ion etching of metals or oxides in the SiO 2 -Si structures showed [37] that ion-beam-assisted plasma etching leads to considerable degradation phenomena: an increase of the leakage current through the dielectric; the building-up of a positive fixed charge near the SiO 2 -Si interface; and the activation of charge transport in the dielectric. However, the following improvement of the equipment and the elaboration of new technological regimes allow one to realize the technologies of plasma treatment leading not only to a simply annealed oxide charge [70] but also to a significant improvement of the SiO 2 -Si properties, for instant: a considerable reduction of the positive fixed charge in the dielectric [2,8,57,68]; a decrease of ion charge transport in dioxide [71]; a better quality of the Sinanocrystals/SiO 2 amorphous matrix interface [10,11], a considerable decrease of the positive charge building-up in oxide after the following irradiation [68], and an increase of the lifetime of metal-oxide-silicon lightemitting diodes (MOSLEDs) operating under high-field electron injection [72,73]. Let us consider consistently these phenomena.…”