Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers

Nazarov, A. N.

doi:10.15407/spqeo11.02.101

Cited by 14 publications

(17 citation statements)

References 113 publications

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“…It is also thought that in the case of increased annealing temperature, a formation of Si = O bonds, along with an increase in number of dangling bonds may be possible. Increased number of dangling bonds increases the number of localized states in the band-structure along with an increase in non-radiative centers (Pb) 47,48 . This result in energy-width broadening of localized states with annealing temperature, resulting in bandgap alteration ( Fig.…”

Section: Photocurrent Measurementsmentioning

confidence: 99%

Fabrication and characterization of Si_1-xGe_x nanocrystals in as-grown and annealed structures: A comparative study

Sultan¹,

Teodorescu²,

Guðmundsson³

et al. 2019

Preprint

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Multilayer structure comprising of SiO2/SiGe/SiO2 were obtained by depositing SiO2 layers using reactive direct current magnetron sputtering (dcMS), whereas, Si and Ge were co-sputtered using dcMS and high impulse power magnetron sputtering (HiPIMS), respectively. The as-grown structures subsequently underwent rapid thermal annealing (550 – 900 °C for 1 min) in N2 ambient atmosphere. The structures were investigated using X-ray diffraction, high-resolution transmission electron microscopy along with photoconductive analysis, to explore structural changes and constituent properties. It is observed that the employment of HiPIMS facilitates the formation of SiGe nano-particles (~ 2.1 ± 0.8 nm) in the as-grown structure, and that presence of such nano-particles acts as a seed for heterogeneous nucleation, which upon annealing results in formation of periodically arranged columnar self-assembly of core-shell SiGe nanocrystals. Consequently an increase in photocurrent intensity by more than an order of magnitude was achieved by the annealing. Furthermore, a detailed discussion is provided on strain development within the structures, the consequent interface characteristics and its effect on the photocurrent spectra.

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Section: Photocurrent Measurementsmentioning

confidence: 99%

Fabrication and characterization of Si_1-xGe_x nanocrystals in as-grown and annealed structures: A comparative study

Sultan¹,

Teodorescu²,

Guðmundsson³

et al. 2019

Preprint

View full text Add to dashboard Cite

show abstract

“…Additionally, it is well established, that in the case of increased annealing temperature, a formation of Si=O bonds, along with an increase in the number of dangling bonds may be possible. An increased number of dangling bonds increases the number of localized states in the band structure along with an increase in non-radiative centers (P b ) [48–49]. This results in a broadening of the energy width of localized states with annealing temperature, resulting in bandgap alteration (Fig.…”

Section: Resultsmentioning

confidence: 99%

Fabrication and characterization of Si₁₋_xGe_x nanocrystals in as-grown and annealed structures: a comparative study

Sultan

Maraloiu

Stavarache

et al. 2019

Beilstein J. Nanotechnol.

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Multilayer structures comprising of SiO2/SiGe/SiO2 and containing SiGe nanoparticles were obtained by depositing SiO2 layers using reactive direct current magnetron sputtering (dcMS), whereas, Si and Ge were co-sputtered using dcMS and high-power impulse magnetron sputtering (HiPIMS). The as-grown structures subsequently underwent rapid thermal annealing (550–900 °C for 1 min) in N2 ambient atmosphere. The structures were investigated using X-ray diffraction, high-resolution transmission electron microscopy together with spectral photocurrent measurements, to explore structural changes and corresponding properties. It is observed that the employment of HiPIMS facilitates the formation of SiGe nanoparticles (2.1 ± 0.8 nm) in the as-grown structure, and that presence of such nanoparticles acts as a seed for heterogeneous nucleation, which upon annealing results in the periodically arranged columnar self-assembly of SiGe core–shell nanocrystals. An increase in photocurrent intensity by more than an order of magnitude was achieved by annealing. Furthermore, a detailed discussion is provided on strain development within the structures, the consequential interface characteristics and its effect on the photocurrent spectra.

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“…The first effect of the oxygen or hydrogen plasma treatment would be the cleaning of the nanowire surfaces, which provides more adsorption and binding sites for the target molecules and leads to stronger and faster responses. 19,20 Because oxygen plasma is more efficient in cleaning organic contaminants than hydrogen plasma, the higher sensitivity after the oxygen plasma treatment is expected. Exposure to oxygen plasma and subsequently to air is known to result in formation of hydroxyl groups on the surface, 21 and previously we have found that surface hydroxyl groups form charge transfer complexes with nitro groups of nitro explosives and strengthen the chemiresistive effect in TiO 2 -B nanowires.…”

Section: Resultsmentioning

confidence: 99%

Chemiresistive response of silicon nanowires to trace vapor of nitro explosives

et al. 2012

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Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers

Cited by 14 publications

References 113 publications

Fabrication and characterization of Si_1-xGe_x nanocrystals in as-grown and annealed structures: A comparative study

Fabrication and characterization of Si_1-xGe_x nanocrystals in as-grown and annealed structures: A comparative study

Fabrication and characterization of Si₁₋_xGe_x nanocrystals in as-grown and annealed structures: a comparative study

Chemiresistive response of silicon nanowires to trace vapor of nitro explosives

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Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers

Cited by 14 publications

References 113 publications

Fabrication and characterization of Si1-xGex nanocrystals in as-grown and annealed structures: A comparative study

Fabrication and characterization of Si1-xGex nanocrystals in as-grown and annealed structures: A comparative study

Fabrication and characterization of Si1−xGex nanocrystals in as-grown and annealed structures: a comparative study

Chemiresistive response of silicon nanowires to trace vapor of nitro explosives

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Fabrication and characterization of Si_1-xGe_x nanocrystals in as-grown and annealed structures: A comparative study

Fabrication and characterization of Si_1-xGe_x nanocrystals in as-grown and annealed structures: A comparative study

Fabrication and characterization of Si₁₋_xGe_x nanocrystals in as-grown and annealed structures: a comparative study