Nonequilibrium Field Effect on Si in the Region of High Depletion

Primachenko, V. E.; Snitko, O. V.; Миленин, В. В.

doi:10.1002/pssb.19650110222

Cited by 15 publications

(8 citation statements)

References 4 publications

(1 reference statement)

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“…In the course of lowering the temperature, at its definite value we could observe the effect of photomemory for ϕ s [25], therefore ϕ s measurements were performed by the first light pulse complying the procedure of cleaning out the surface traps from trapped minority charge carriers [39]. Electric field dependencies ϕ s (V) were measured under definite fixed temperatures within the range 300-100 K. The external voltage V applied to the measuring capacitor was varied between +400 to −400 V. In this case, the measurements were carried out under illumination of the capacitor with the second light pulse in their train to eliminate the influence of the ϕ s photomemory effect by saturation of the traps with minority charge carriers created by the first light pulse as well as to avoid nonequilibrium arising in silicon at depleting voltages V [40].…”

Section: Investigation Of Bes By Surface Photovoltage Methodsmentioning

confidence: 99%

Electron states at the Si-SiO2 boundary (Review)

Primachenko¹,

Lashkaryov²

2005

Semicond. phys. quantum electron. optoelectron.

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This review is aimed at analysis of the system of discrete and continuously distributed boundary electron states (BES) on (111) and (100) silicon surfaces in the Si-SiO 2 structures prepared mainly using thermal oxidation of silicon. Used here are literature data as well as results obtained by authors when studying the temperature and electric field dependencies of the capacitive photovoltage. It has been ascertained that the BES system consists of a continuous U-like distribution in the silicon forbidden gap and from the discrete BES as well. There developed are two discrete BES in the thermally oxidized Si(111)-SiO 2 structure, while in the Si(100)-SiO 2 structure-four ones. These results well coordinated with ESR investigations were obtained using the method of temperature dependencies for capacitive photovoltage without application of an external electric field. As shown, application of various electric-field methods enables to determine only effective parameters of discrete and especially continuously distributed BES, which depend on the temperature of measurements, silicon resistivity and conditions of preparation of the Si-SiO 2 boundary. Considered are the features of preoxidation treatment of the silicon surface and its oxidation, the character of the intermediate layer between Si and SiO 2 , and the influence of such external factors as annealing in various ambient atmospheres, irradiation and high electric fields as well.

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Section: Investigation Of Bes By Surface Photovoltage Methodsmentioning

confidence: 99%

Electron states at the Si-SiO2 boundary (Review)

Primachenko¹,

Lashkaryov²

2005

Semicond. phys. quantum electron. optoelectron.

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“…In our works [19][20][21], for the first time we investigated far and wide the phenomenon of nonequilibrium depletion with the majority charge carriers, which takes place in silicon wafers of p-and n-types of conductance with a real (treated with an etching agent) surface. In these experiments, we used both depleting fields and turning off the enriching ones.…”

Section: Non-equilibrium Depletion Of Silicon With Majority Charge Camentioning

confidence: 99%

“…Investigated in [19][20][21] were silicon samples both of n-and p-types. Data obtained using n-Si (ρ = 200 Ohm•cm) had the same qualitative character as compared with those obtained for the samples p-Si (ρ = 4100 Ohm•cm) that were subjected to the most full study.…”

Section: Non-equilibrium Depletion Of Silicon With Majority Charge Camentioning

confidence: 99%

“…In [20,21], being based on the data above the authors performed theoretical verification of the field effect mechanism in the regime of non-equilibrium depletion. They calculated changes of the space charge in SCR, electric field in p-Si, Si conductance and capacitance in the dependence of the potential drop on it in the non-equilibrium regime.…”

Section: Non-equilibrium Depletion Of Silicon With Majority Charge Camentioning

confidence: 99%

“…Being based on investigations of the nonequilibrium field effect in silicon, in [19][20][21] we brought out the idea to design new type of semiconductor devices with an isolated field electrode [27]. It was noted that these devices could provide amplification, modulation and storage of electric signals, realize modulation of infra-red light, play the role of a changeable resistance and capacitor (varactor), be sensitive detector of light and other radiation types, be used as time and temperature relays.…”

Section: Non-equilibrium Depletion Of Silicon With Majority Charge Camentioning

confidence: 99%

See 2 more Smart Citations

Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it

Primachenko¹

2008

Semicond. phys. quantum electron. optoelectron.

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This overview deals with original works of authors as well as with works by native and foreign authors, which are devoted to this or close topics. It is written with account of the modern state of the problem, to solve which a great amount of successful work was made by Academician of NAS of Ukraine O.V. Snitko. Considered in this paper are the essence of the phenomenon of non-equilibrium depletion with majority charge carriers that takes place in the field effect in silicon and a set of new phenomena that were revealed by the authors when investigating this effect. Besides, analyzed in detail are the processes of acceleration inherent to relaxation of the non-equilibrium depletion in strong electric fields (E s = 3•10 3-5•10 5 V/cm) at silicon surface being in various physical-and-chemical states. It is noted that the Franz-Keldysh or Frenkel effects for local centers play the main role in acceleration of relaxation with growing E s at the silicon surface. In this case, an essential role belongs to electron-phonon interaction of the charge carrier at the local center with continuum phonons around this center.

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Effect of surface states on transient processes in silicon field cathodes

Stetsenko

Yatsenko

Miroshnichenko

1970

Phys. Stat. Sol. (a)

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Pulse photo‐field‐emission from 7000 Ω p‐type Si has been investigated. It is shown that the onset of the emission current is biased with respect to onset of the voltage pulse; the emission current passes through a maximum decreasing towards the end of the pulse. The delay time depends on the light intensity, cathode temperature, bias voltage, and pulse voltage. The presence of the delay time and the drop of the emission current pulse show that surface states are essential in the phenomenon of photo‐field‐emission for the real surface of Si. The density estimated from the field value near the surface (E ≧ 107 V/cm) exceeds 1013 cm−2. Experimental results show qualitative agreement with the model of the photo‐field‐emission given in [3].

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Nonequilibrium Field Effect on Si in the Region of High Depletion

Cited by 15 publications

References 4 publications

Electron states at the Si-SiO2 boundary (Review)

Electron states at the Si-SiO2 boundary (Review)

Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it

Effect of surface states on transient processes in silicon field cathodes

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