The features of the non‐equilibrium field effect are investigated for silicon in the region of high majority carrier depletion and non‐equilibrium between the energy bands. The observed effects are a strong asymmetry of the amplitude dependence of conductivity with respect to the sign of the external field, a current‐pinch effect, and a strong dependence of the kinetics of field effect on field strength, temperature, and light intensity. A mechanism is proposed for the non‐equilibrium field effect in the depletion region which involves a strong retardation of screening by surface states at low temperatures and thus allows penetration of the field into the volume of the crystal. The experimental data agree quantitatively with the calculation.
This review is aimed at analysis of the system of discrete and continuously distributed boundary electron states (BES) on (111) and (100) silicon surfaces in the Si-SiO 2 structures prepared mainly using thermal oxidation of silicon. Used here are literature data as well as results obtained by authors when studying the temperature and electric field dependencies of the capacitive photovoltage. It has been ascertained that the BES system consists of a continuous U-like distribution in the silicon forbidden gap and from the discrete BES as well. There developed are two discrete BES in the thermally oxidized Si(111)-SiO 2 structure, while in the Si(100)-SiO 2 structure-four ones. These results well coordinated with ESR investigations were obtained using the method of temperature dependencies for capacitive photovoltage without application of an external electric field. As shown, application of various electric-field methods enables to determine only effective parameters of discrete and especially continuously distributed BES, which depend on the temperature of measurements, silicon resistivity and conditions of preparation of the Si-SiO 2 boundary. Considered are the features of preoxidation treatment of the silicon surface and its oxidation, the character of the intermediate layer between Si and SiO 2 , and the influence of such external factors as annealing in various ambient atmospheres, irradiation and high electric fields as well.
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