I n o r d e r t o p u r s u e h i g h s p e e d p e r f o r m a n c e o f CMOS l o g i c g a t e s , lpm CMOS technology has been r ealized by using advanced process technologies. CMOS l o g i c g a t e a r r a y s , w i t h minimum f e a t u r e s i z e o f 1 -l y m , were prepared, and their operation speed performances were evaluated. Delay times per gate o f 0.1 -0 . 2 ns have been observed i n CMOS l o g i c a r r a y s o f SNAND, 3NOR and F/0=3 INVERTER a r r a y s , o f 1 . l y n d e s i g n r u l e . CMOS basic technology has been developed. In this p a p e r , p r o c e s s t e c h n o l o g y , e l e c t r i c a l c h a r a c t e r i st i c s o f N-channel and P-channel transistors, and d e v i c e o p e r a t i o n c h a r a c t e r i s t i c s o f t h e CMOS l o g i c a r r a y s , a r e d e s c r i b e d .
A new simple model for profiling the impurities within a shallow p‐n junction from spreading resistance data is proposed. Dickey's capacitance analogue method is extended to a “multilayer” geometry. Direct translation of the differential sheet conductance method to the spreading resistance method is performed. As examples of this approach, the cases of shallow boron (11B+)‐, phosphorus (31P+)‐, and arsenic (As)‐doped layers in silicon are discussed.
Ion-implanted MOS transistors were fabricated and their electrical characteristics, such as threshold voltage, effective mobility, etc., were measured. In the 11B+-implanted p-channel case, threshold voltage VT can be shifted linearly with implant dose. These shifts ΔVT were entirely determined by the net dose entering silicon. On the other hand, in the 11B+-implanted n-channel case, threshold voltage shift ΔVT varied sublinearly with dose and showed strong dose profile dependence. The profiles were varied with changing implantation energies and annealing times. These results can be interpreted in accordance with the rapid decrease of the maximum surface depletion layer Xd max with the implant dose increase. Numerical calculations of threshold voltage shifts accounting for nonuniformly implanted profiles were compared with observed results. Good agreement was obtained. Effective mobilities μeff of 11B+-implanted p - and n -channel MOS transistors also showed different dose dependences. In the low-dose region, effective mobilities of 11B+-implanted p -channel MOSFET remained almost unchanged, but those of the n -channel case decreased monotonically with dose increase. Qualitative arguments, taking into account surface scattering and impurity scattering effects, and rough calculations are presented.
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