Impurity Profiles within a Shallow p‐n Junction by a New Differential Spreading Resistance Method

Abstract

A new simple model for profiling the impurities within a shallow p‐n junction from spreading resistance data is proposed. Dickey's capacitance analogue method is extended to a “multilayer” geometry. Direct translation of the differential sheet conductance method to the spreading resistance method is performed. As examples of this approach, the cases of shallow boron (11B+)‐, phosphorus (31P+)‐, and arsenic (As)‐doped layers in silicon are discussed.

High Speed Implementation and Experimental Evaluation of Multilayer Spreading Resistance Analysis

“…The trends indicate that the effects of nonideal contact phenomena, such as barrier potentials, and piezoresistance, increase with increasing surface damage. The nonlinearity in the calibration curve can be compensated by including an empirical barrier resistance into the correction algorithm (2,6).…”

“…Each layer is assumed to have uniform concentration and finite thickness, equal to ~ the distance between measurement points. If a p-n junction exists within one probe radius of the surface then a differential spreading resistance technique, analgous to fourpoint probe incremental sheet resistance, can be applied (5,6). The resulting correction factors are explicit functions of the profile slope .and are fairly accurate for Shallow structures.…”

Implanted As Redistribution during Annealing in Oxidizing Ambient

“…Kudoh et aL recently developed a simple method for profiling the impurities within a shallow p-n junction by spreading-resistance probe technique (5). In the present study, this newly developed technique has been applied to obtain carrier distributions in 7~As+implanted layers after steam oxidations at temperatures below 1000~ and thus to provide processing data for short-channel MOS or shallow junction bipolar IC's.…”