Articles you may be interested inInfluence of a high vacuum on the precise positioning using an ultrasonic linear motor Rev. Sci. Instrum. 82, 015112 (2011);A new XY stage employing ultrasonic linear motors that is simple, compact, and completely nonmagnetic was developed for an e-beam x-ray mask writer employing step-and-repeat writing. The main performance results are: ͑1͒ position fluctuations during writing are less than Ϯ4 nm; ͑2͒ the time for a 650 m step movement is less than 270 ms; ͑3͒ the magnetic interference is less than Ϯ1 nT at the e-beam deflection center; and ͑4͒ the vibration of the stage when moving at a constant speed is less than Ϯ0.25 m/s 2 . The new stage is also very easy to maintain. It has been installed in the EB-X3 e-beam x-ray mask writer.
A high speed, high precision electron beam lithography system (system design) J. Vac. Sci. Technol. B 3, 94 (1985); 10.1116/1.583299Yaw corrected precision X-Y stage for high-throughput electron-beam lithography systems A high speed electron beam lithography system
Articles you may be interested inEfficient proximity effect correction method based on multivariate adaptive regression splines for grayscale ebeam lithography J. Vac. Sci. Technol. B 32, 031602 (2014); 10.1116/1.4875955 Performances by the electron optical system of low energy electron beam proximity projection lithography tool with a large scanning field J. Vac. Sci. Technol. B 23, 2754 (2005); 10.1116/1.2062435 Resolution-limiting factors in low-energy electron-beam proximity projection lithography: Mask, projection, and resist process J. Vac. Sci. Technol. B 22, 136 (2004); 10.1116/1.1635850 Resist debris formation and proximity exposure effect in electron beam lithography Low energy electron-beam proximity projection lithography: Discovery of a missing link We have proposed low energy electron-beam proximity projection lithography ͓T. Utsumi, Jpn. J.Appl. Phys., Part 1 38, 7046 ͑1999͒; J. Vac. Sci. Technol. B 17, 2897 ͑1999͔͒ ͑LEEPL͒ for LSI production lithographic processes below 100-nm-feature size. One and one half years ago, the proof of concept ͑POC͒ of LEEPL was successfully completed using an ␣ tool. Now, a  tool of LEEPL, which is similar to a mass production tool in the 100-and 70-nm-technology node, has been developed. We have already completed the performance evaluations of the  tool and confirmed proof of lithography. We obtained patterning resolution of 45-nm-L/S patterns and 48-nm -hole patterns in resist images and overlay accuracy of 23 nm ͑3͒ in the x direction and 31 nm ͑3͒ in the y direction over an effective area of 8 in. wafer. Furthermore, functionality of complementary mask alignment was demonstrated and logic type device-like patterns in 100-nm-technology node were fabricated.
XY stage driven by ultrasonic linear motors for the electron-beam x-ray mask writer EB-X3 J.An electron optical system that yields a beam voltage of 100 kV and a beam edge resolution of 20 nm was developed for a variably shaped electron beam writing system, the EB-X2. In order to improve the beam edge resolution, the objective lens and main deflector were designed on the basis of the uniform field concept, and the optimum beam half-angle was determined by beam profile calculations. The optimized design provides a beam edge resolution of 20 nm for a 650-m-square deflection field and a beam current of 250 nA. Given the high acceleration voltage, it is possible that the electron optical column could be too high to fit into a clean room. To shorten the height of the electron optical column, the lens configuration was carefully examined. The results show that the height of the column is a minimum when the first shaping aperture is placed in the principal plane of the illumination lens. This finding enabled us to reduce the height of the column to 880 mm. The electron optical column was constructed and the beam edge resolution was measured. The measured values agree well with the calculated ones, which confirms that the constructed column has the performance expected of the EB-X2 electron optical system.
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