A novel poly(siloxane)-based chemically amplified resist has been developed. The polymer is a glass precursor, and it can be converted to silicate glass through merely a lithographic procedure. The developed resist has a high sensitivity of 1.3 µC/cm2 and a high resolution of 0.1 µm lines and spaces. Simple and highly selective etching processes using the silicate glass mask obtained from this resist system have been proposed, which is substantiated in the bilevel resist process and tungsten-etching process.
Negative photoresist, LMR-UV, has been developed for i-line lithography. It resolves isolated 0.3 µm space and 0.35 µm hole patterns of 1.0 µm thickness by using a 0.42-numerical-aperture i-line reduction projection aligner. LMR-UV gives overhung profiles because of its large absorption coefficient of 3.8 µm-1 at the i-line. New phase-shifting mask patterns which are adapted to isolated space and hole patterns for negative resist have been developed. By use of this mask, LMR-UV clearly resolves 0.25 µm space and 0.3 µm hole patterns by using the i-line aligner. This phase-shifting mask improves both resolution and focus margin.
Articles you may be interested inEfficient proximity effect correction method based on multivariate adaptive regression splines for grayscale ebeam lithography J. Vac. Sci. Technol. B 32, 031602 (2014); 10.1116/1.4875955 Performances by the electron optical system of low energy electron beam proximity projection lithography tool with a large scanning field J. Vac. Sci. Technol. B 23, 2754 (2005); 10.1116/1.2062435 Resolution-limiting factors in low-energy electron-beam proximity projection lithography: Mask, projection, and resist process J. Vac. Sci. Technol. B 22, 136 (2004); 10.1116/1.1635850 Resist debris formation and proximity exposure effect in electron beam lithography Low energy electron-beam proximity projection lithography: Discovery of a missing link We have proposed low energy electron-beam proximity projection lithography ͓T. Utsumi, Jpn. J.Appl. Phys., Part 1 38, 7046 ͑1999͒; J. Vac. Sci. Technol. B 17, 2897 ͑1999͔͒ ͑LEEPL͒ for LSI production lithographic processes below 100-nm-feature size. One and one half years ago, the proof of concept ͑POC͒ of LEEPL was successfully completed using an ␣ tool. Now, a  tool of LEEPL, which is similar to a mass production tool in the 100-and 70-nm-technology node, has been developed. We have already completed the performance evaluations of the  tool and confirmed proof of lithography. We obtained patterning resolution of 45-nm-L/S patterns and 48-nm -hole patterns in resist images and overlay accuracy of 23 nm ͑3͒ in the x direction and 31 nm ͑3͒ in the y direction over an effective area of 8 in. wafer. Furthermore, functionality of complementary mask alignment was demonstrated and logic type device-like patterns in 100-nm-technology node were fabricated.
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