Completion of the β tool and the recent progress of low energy e-beam proximity projection lithography

Abstract

Articles you may be interested inEfficient proximity effect correction method based on multivariate adaptive regression splines for grayscale ebeam lithography J. Vac. Sci. Technol. B 32, 031602 (2014); 10.1116/1.4875955 Performances by the electron optical system of low energy electron beam proximity projection lithography tool with a large scanning field J. Vac. Sci. Technol. B 23, 2754 (2005); 10.1116/1.2062435 Resolution-limiting factors in low-energy electron-beam proximity projection lithography: Mask, projection, and resist process J. Vac. Sci. Technol. B 22, 136 (2004); 10.1116/1.1635850 Resist debris formation and proximity exposure effect in electron beam lithography Low energy electron-beam proximity projection lithography: Discovery of a missing link We have proposed low energy electron-beam proximity projection lithography ͓T. Utsumi, Jpn. J.Appl. Phys., Part 1 38, 7046 ͑1999͒; J. Vac. Sci. Technol. B 17, 2897 ͑1999͔͒ ͑LEEPL͒ for LSI production lithographic processes below 100-nm-feature size. One and one half years ago, the proof of concept ͑POC͒ of LEEPL was successfully completed using an ␣ tool. Now, a ␤ tool of LEEPL, which is similar to a mass production tool in the 100-and 70-nm-technology node, has been developed. We have already completed the performance evaluations of the ␤ tool and confirmed proof of lithography. We obtained patterning resolution of 45-nm-L/S patterns and 48-nm -hole patterns in resist images and overlay accuracy of 23 nm ͑3͒ in the x direction and 31 nm ͑3͒ in the y direction over an effective area of 8 in. wafer. Furthermore, functionality of complementary mask alignment was demonstrated and logic type device-like patterns in 100-nm-technology node were fabricated.

BEOL process technology based on proximity electron lithography: demonstration of the via-chain yield comparable with ArF lithography

“…1 is a potential solution for this critical situation because of its lower cost of ownership. 3 For the demonstration of the applicability of PEL to real-device production, we already reported the results of the first electric characterization 4 by using our 90-nm BEOL process technology. 5 The via-layer sandwiched by the upper and lower Cu interconnects were fabricated by using both the low-energy electron-beam proximity-projection lithography (LEEPL) β tool and the ArF scanner, and the electric characteristics were compared between the two methods.…”

Resolution-limiting factors in low-energy electron-beam proximity projection lithography: Mask, projection, and resist process

“…[1][2][3][4][5][6] Current issues can be categorized into the following: imaging capability, 2 mask contamination, 3 image-placement accuracy, 4,5 throughput, 6 and cost of ownership. [1][2][3][4][5][6] Current issues can be categorized into the following: imaging capability, 2 mask contamination, 3 image-placement accuracy, 4,5 throughput, 6 and cost of ownership.…”