Proximity electron lithography (PEL) using the ultra-thin tri-layer resist system has been successfully integrated in our dual-damascene Cu/low-k interconnects technology for the 90-nm node. Critical comparison between conventional ArF lithography and PEL as to the via-chain yield for test element groups (TEGs) including approximately 2.9 million via chains was performed to demonstrate its production feasibility.
Imaging capabilities of low-energy electron-beam proximity-projection lithography (LEEPL) are discussed focusing mainly on the hole patterns for chemically amplified resist. LEEPL needs a multi-layer process with a resist layer less than 100 nm thick. To achieve the imaging performance of the 65nm node (80nm), we optimized intermediate spin-on-glass (SOG) layer and top-layer resists, which were selected carefully. 80 nm hole patterns were achieved with 10% exposure latitude, and current imaging position and 45 nm node positions were investigated using σ QBP. σ QBP was improved from 64.5 nm to 48.9 nm.
Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography J.Low energy electron-beam proximity projection lithography: Discovery of a missing link
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