β-Ga2O3 thin-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) were evaluated using both DC and pulsed I-V measurements. The reported pulsed I-V technique was used to study self-heating effects in the MOSFET channel. The device was analyzed over a large temperature range of 23 to 200°C. A relationship between dissipated power and channel temperature was established, and it was found that the MOSFET channel was heating up to 208°C when dissipating 2.5 W/mm of power. The thermal resistance of the channel was found to be 73°C-mm/W. The results are supported with experimental Raman nano-thermography and thermal simulations and are in excellent agreement with pulsed I-V findings. The high thermal resistance underpins the importance of optimizing thermal management in future Ga2O3 devices.

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While heterostructures are ubiquitous tools enabling new physics and device functionalities, the palette of available materials has never been richer. Combinations of two emerging material classes, two-dimensional materials and topological materials, are particularly promising because of the wide range of possible permutations that are easily accessible. Individually, both graphene and Pb1-xSnxTe (PST) are widely investigated for spintronic applications because graphene’s high carrier mobility and PST’s topologically protected surface states are attractive platforms for spin transport. Here, we combine monolayer graphene with PST and demonstrate a hybrid system with properties enhanced relative to the constituent parts. Using magnetotransport measurements, we find carrier mobilities up to 20 000 cm2/(V s) and a magnetoresistance approaching 100%, greater than either material prior to stacking. We also establish that there are two distinct transport channels and determine a lower bound on the spin relaxation time of 4.5 ps. The results can be explained using the polar catastrophe model, whereby a high mobility interface state results from a reconfiguration of charge due to a polar/nonpolar interface interaction. Our results suggest that proximity induced interface states with hybrid properties can be added to the still growing list of behaviors in these materials.

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