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Reverse bias leakage in bulk GaN-on-GaN pn diodes has been studied as a function of time. A peak was observed in the current transient and attributed to impurity band conduction along dislocations which is modulated by the field effect of charged decorating clusters. This model is consistent with reports of vacancy clustering around dislocations during growth.

Comparison between pulsed and CW large signal RF performance of field-plated β-Ga 2 O 3 MOSFETs has been reported. Reduced self-heating when pulse resulted in a power added efficiency of 12%, drain efficiency of 22.4%, output power density of 0.13 W/mm, and maximum gain up to 4.8 dB at 1 GHz for a 2-μm gate length device. Increased power dissipation for higher V DS and I DS resulted in a degradation in performance, which, thermal simulation showed, could be entirely explained by self-heating. Buffer and surface trapping contributions have been evaluated using gate and drain lag measurements, showing minimal impact on device performance. These results suggest that β-Ga 2 O 3 is a good candidate for future RF applications. Index Terms-Ga 2 O 3 MOSFET, large signal RF, pulsed RF, power added efficiency (PAE), pulsed IV. I. INTRODUCTIONT HE material of β-Ga 2 O 3 with a bandgap of 4.9 eV and large electric breakdown strength of 8 MVcm −1 has garnered great interest in the power conversion community; however, there are also opportunities for RF applications [1], [2]. Ga 2 O 3 features a Baliga's figure of merit (BFOM), which is based on the mobility and bandgap, more than 10× higher than for SiC and 4× higher than for GaN [3]. High breakdown voltages up to 755 V with a high drain current on/off ratio of 10 9 have been demonstrated for lateral Ga 2 O 3 transistors [4]. Johnson's figure of merit (saturation velocity times critical electric field product, vsat•Ec) for high frequency devices is very much comparable to GaN [1], [5].