Small-voltage multiferroic control of two-dimensional magnetic insulators

Nonvolatile Memristive Effect in Few-Layer CrI3 Driven by Electrostatic Gating

“…If substantiated, this would not only establish few-layer CrI 3 as an intriguing platform for studying 2D multiferroics, but it could also shed light on the pronounced magnetoelectric coupling observed in few-layer CrI 3 . [23][24][25][26][27][28]50 Furthermore, comparing with previous studies of nonvolatile devices based on 2D materials, 51 our device demonstrates distinct advantages: (1) The junction area of our device is approximately 0.1 mm 2 , making it the smallest of its kind to date; (2) Unlike the majority of reported devices that utilize a planar structure, our device is designed with a vertical stacking structure; and (3) The energy consumption of our device is around 18 fJ, marking it as the most energy-efficient among those studied.…”

Electronic Noise Spectroscopy of Quasi-Two-Dimensional Antiferromagnetic Semiconductors

“…Research interest in low-dimensional magnetic systems has been rapidly increasing since the experimental discovery of various forms of magnetism in the few- and single-layer limits of quasi-two-dimensional (quasi-2D) materials. − These developments have enabled designs of novel spintronic devices with applications in sensing, data storage, and information processing. , In the realm of magnetic materials used in spintronics, there has been a considerable focus on ferro- and ferrimagnetic (FM) compounds that were either electrically insulating or electrically conductive, while much less attention has been devoted to antiferromagnetic semiconductors (AFMS). Notably, the effect of spin ordering on the dynamics of charge carrier transport and electronic noise in AFMS, especially across the material’s magnetic transition, is often overlooked.…”

Non-volatile control of topological phase transition in an asymmetric ferroelectric In2Te2S monolayer

“…[1][2][3][4][5][6][7][8][9] Among numerous possible strategies, the use of ferroelectrics to control topological phase transition, especially generation and annihilation, has drawn widespread attention and promoted rapid development. 1,2,4,8,[10][11][12][13][14][15][16] In ferroelectrics, polarization can serve as an external electric field, but it is superior to the electric field, due to its non-volatility and lower energy consumption. 10,17,18 Recent studies have shown that such coupling can be realized in two-dimensional (2D) hetero-bilayer systems, such as Sb/In 2 Se 3 , 12 Bi/In 2 Se 3 , 13 MnSe/In 2 Se 3 , 11 and CuI/In 2 Se 3 .…”