Non-volatile control of topological phase transition in an asymmetric ferroelectric In<sub>2</sub>Te<sub>2</sub>S monolayer

Song, Guang; Wu, Yangyang; Cao, Lei; Li, Guannan; Zhang, Bingwen; Liang, Feng; Gao, Benling

doi:10.1039/d3cp02616g

Cited by 3 publications

(1 citation statement)

References 68 publications

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“…35–38 An exemplary case is the Janus In 2 Te 3 monolayer, which, with its diminutive band gap, demonstrates remarkable potential in photocatalytic water splitting, attributable to its innate electric field. 39 Our preceding research on 2D C 3 PN and SiXY (where X and Y are group-VA elements) further validates the rationale behind adopting Janus configurations to amplify the photocatalytic prowess of 2D materials in water splitting. 40 Hence, even if certain 2D phosphorus carbide semiconductors exhibit non-ideal band structures or work functions, innovative designs can still render them viable contenders for metal-free photocatalytic water splitting.…”

Section: Introductionmentioning

confidence: 57%

Novel C₄P₂ monolayers: forming Z-scheme heterojunction and Janus structure for high-efficiency metal-free photocatalytic water splitting

Lin,

Zhang

2024

Phys. Chem. Chem. Phys.

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Section: Introductionmentioning

confidence: 57%

Novel C₄P₂ monolayers: forming Z-scheme heterojunction and Janus structure for high-efficiency metal-free photocatalytic water splitting

Lin,

Zhang

2024

Phys. Chem. Chem. Phys.

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Ferroelectric quantum spin Hall effect in two-dimensional In2TeS2

Zhao,

Wang,

Liang

2023

Applied Physics Letters

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Ferroelectricity and band topology are hot topics in condensed matter physics, and the nonvolatile regulation of topological orders through ferroelectric properties is crucial for the design of next-generation miniature electronic devices. Here, using first-principles calculations, we demonstrate the coexistence of intrinsic ferroelectric and topological properties in two-dimensional (2D) In2TeS2. Interestingly, in single-layer In2TeS2, the spin flipping of chiral edge states occurs when the direction of ferroelectric polarization is reversed. While for In2TeS2 homobilayers, we find that the topological properties are stacking-dependent, and the ferroelectric order can be served as an effective means to achieve topological phase transition between trivial and nontrivial states. Our work not only shed light on the intrinsic 2D ferroelectric topological insulator but also put forward it as a promising candidate for high-efficiency and low-energy consumption electronic devices.

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Electrical control of metal–insulator transition and magnetism in asymmetric multiferroic InCrX3 (X = S, Se) monolayers

Wu,

Cao,

et al. 2024

Applied Physics Letters

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Electrical control of conductivity and magnetism in two-dimensional (2D) ferroelectric (FE) materials have attracted immense attention due to their fascinating properties and potential applications in designing field-effect transistors and high-density multistate data storage. Based on first-principles calculations and crystal field theory, we present an approach to obtain 2D intrinsic asymmetric multiferroics by replacing the In atom in the ferroelectric In2X3 monolayer (X = S, Se) with the Cr atom. Interestingly, it is found that the InCrX3 monolayers have two inequivalent polarized states, which are characterized by metal and semiconductor, respectively, which is related to the crystal field around Cr3+ ions. Thus, it provides a feasible way to realize electrical control of reversible metal–insulator transition induced by ferroelectric switching, indicating that the InCrX3 monolayers can be used as the channel materials in the FE memory technology. In addition, because of the existence of the Cr3+ ions, the InCrX3 monolayers also exhibit robust ferromagnetism with different Curie temperatures and magnetocrystalline anisotropy energies, which can provide a good platform for realizing the strong coupling between the magnetism and ferroelectricity. These interesting results provide a feasible way to design asymmetric FE materials with regulatable conductivity and magnetism that can enable a wide range of applications in nanodevices.

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Non-volatile control of topological phase transition in an asymmetric ferroelectric In₂Te₂S monolayer

Abstract: In2Te2S monolayer is an asymmetric ferroelectric material, which can realize nonvolatile ferroelectric control of topological phase transition.

Cited by 3 publications

References 68 publications

Novel C₄P₂ monolayers: forming Z-scheme heterojunction and Janus structure for high-efficiency metal-free photocatalytic water splitting

Novel C₄P₂ monolayers: forming Z-scheme heterojunction and Janus structure for high-efficiency metal-free photocatalytic water splitting

Ferroelectric quantum spin Hall effect in two-dimensional In2TeS2

Electrical control of metal–insulator transition and magnetism in asymmetric multiferroic InCrX3 (X = S, Se) monolayers

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Non-volatile control of topological phase transition in an asymmetric ferroelectric In2Te2S monolayer

Abstract: In2Te2S monolayer is an asymmetric ferroelectric material, which can realize nonvolatile ferroelectric control of topological phase transition.

Cited by 3 publications

References 68 publications

Novel C4P2 monolayers: forming Z-scheme heterojunction and Janus structure for high-efficiency metal-free photocatalytic water splitting

Novel C4P2 monolayers: forming Z-scheme heterojunction and Janus structure for high-efficiency metal-free photocatalytic water splitting

Ferroelectric quantum spin Hall effect in two-dimensional In2TeS2

Electrical control of metal–insulator transition and magnetism in asymmetric multiferroic InCrX3 (X = S, Se) monolayers

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Non-volatile control of topological phase transition in an asymmetric ferroelectric In₂Te₂S monolayer

Novel C₄P₂ monolayers: forming Z-scheme heterojunction and Janus structure for high-efficiency metal-free photocatalytic water splitting

Novel C₄P₂ monolayers: forming Z-scheme heterojunction and Janus structure for high-efficiency metal-free photocatalytic water splitting