Extraordinary tunnel electroresistance in layer-by-layer engineered van der Waals ferroelectric tunnel junctions

Wang, Qinqin; Xie, Ti; Blumenschein, Nicholas A.; Song, Zhihao; Kotsakidis, Jimmy C.; Hanbicki, A. T.; Susner, Michael A.; Conner, Benjamin S.; Tan, Qishuo; Lee, Seng Huat; Mao, Zhiqiang; Ling, Xi; Low, Tony; Wang, Jianping; Friedman, Adam L.; Gong, Cheng

doi:10.1016/j.matt.2022.10.014

Cited by 10 publications

(11 citation statements)

References 37 publications

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“…HZO [41] 5.8 3.5 0.1 N/A N/A ≈10 − 3 Over 10 4 Over 10 3 BTO [42] ≈2.1 N/A 0.1 N/A N/A ≈10 −3 N/A N/A CIPS/MoS2 [45] ≈3.5 N/A 0.4 ≈10 −4 N/A N/A N/A N/A LSMO/BTO/LSMO [47] ≈3.6 N/A 0.01 N/A 35 × 10 −12 ≈10 −3 N/A N/A LSMO/BTO/LSMO [146] 3 N/A 0.01 N/A N/A N/A N/A N/A Ni/In2Se3/h-BN/Ni [48] ≈3.34/0.3 N/A N/A N/A N/A N/A N/A N/A FGT/In2Se3/FGT [49] ≈2/≈3.34/≈2 N/A N/A N/A N/A N/A N/A N/A in the capacitor. FeRAM inevitably exhibits a destructive reading process that induces short retention time; thus, alternative device architectures, FeFET and FTJ, have been suggested as promising ferroelectric devices.…”

Section: Comparison and Benchmark Of 2d Ferroelectric Devicesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…Then, in Sections 3, 4, and 5, the three types of devices based on 2D ferroelectric materials will be discussed in detail. We note that the first (FeFET) and third (FTJ) types of devices have also employed conventional 3D ferroelectric materials (e.g., perovskite oxide materials), [33][34][35][36][37][38][39][40][41][42][43][44][45][46][47][48][49] but the second type (active ferroelectric channel devices) is being newly developed with emerging 2D ferroelectric materials. [29,[50][51][52][53][54][55][56][57][58][59][60][61][62] In each chapter, synaptic device applications and their current status are reviewed for each device type.…”

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Memory and Synaptic Devices Based on Emerging 2D Ferroelectricity

Joo

Hwang

Hong

et al. 2023

Adv Elect Materials

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Memory devices are an essential part of modern electronics. Efforts to move beyond the traditional "read" and "write" of digital information in volatile and non-volatile memory devices are leading to the rapid growth of neuromorphic technology. There is a growing demand for memory devices with continuous memory states with various retention times and greater integration density with more energy-efficient mechanisms. Two types of memory devices (i.e., non-volatile digital memory and neuro-synaptic devices) have been extensively investigated with emerging materials. Among numerous materials for such memory devices, in this review, the authors focus on 2D ferroelectric materials for promising memory and synaptic devices. Three types of memory devices based on 2D ferroelectric materials are classified and discussed here: 1) ferroelectric gating of semiconducting channels, 2) active ferroelectric channels, and 3) ferroelectric tunnel junction devices. It is known that atomically thin geometry competes with ferroelectricity, which can degrade the quality of the devices based on atomically thin ferroelectric materials. Various efforts to resolve the fundamental issue with emerging 2D ferroelectric materials and how they can be used as a critical element for memory and synaptic devices are surveyed.

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Section: Comparison and Benchmark Of 2d Ferroelectric Devicesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Memory and Synaptic Devices Based on Emerging 2D Ferroelectricity

Joo

Hwang

Hong

et al. 2023

Adv Elect Materials

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“…Over the past decade, graphene and transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique properties caused by the reduced dimension. Many more two‐dimensional (2D) materials are continuing emerging with a rainbow of intriguing physical properties including excellent photoluminescence (PL) emission 1 (e.g., MoS 2 and MoSe 2 ), superconductivity 2,3 (e.g., NbS 2 and TaS 2 ), magnetism 4–6 (e.g., CrI 3 and NiPS 3 ), and ferroelectricity 7,8 (e.g., CuIn 2 PS 6 ). Moreover, stacking these 2D materials in different configurations—vertically or horizontally—leads to the formation of various homostructures and heterostructures with tunable electronic, optical, and magnetic properties 9–13 …”

Section: Introductionmentioning

confidence: 99%

Determining the twist angle of stacked MoS₂ layers using machine learning‐assisted low‐frequency interlayer Raman fingerprints

Tang

Wang

Tan

et al. 2023

J Raman Spectroscopy

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The investigation of twisted stacked few‐layer MoS2 has revealed novel electronic, optical, and vibrational properties over an extended period. For the successful integration of twisted stacked few‐layer MoS2 into a wide range of applications, it is crucial to employ a noninvasive, versatile technique for characterizing the layered architecture of these complex structures. In this work, we introduce a machine learning‐assisted low‐frequency Raman spectroscopy method to characterize the twist angle of few‐layer stacked MoS2 samples. A feedforward neural network (FNN) is utilized to analyze the low‐frequency breathing mode as a function of the twist angle. Moreover, using finite difference method (FDM) and density functional theory (DFT) calculations, we show that the low‐frequency Raman spectra of MoS2 are mainly influenced by the effect of the nearest and second nearest layers. A new improved linear chain model (TA‐LCM) with taking the twist angle into the consideration is developed to understand the interlayer breathing modes of stacked few‐layer MoS2. This approach can be extended to other 2D materials systems and provides an intelligent way to investigate naturally stacked and twisted interlayer interactions.

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Robust Giant Tunnel Electroresistance and Negative Differential Resistance in 2D Semiconductor/α‐In₂Se₃ Ferroelectric Tunnel Junctions

Luo,

Chen,

Abbas

et al. 2024

Adv Funct Materials

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Ferroelectric tunnel junctions (FTJs) have gained substantial attention as emerging electronic devices such as nonvolatile memory and artificial synapse, owing to their low power consumption and nonvolatile properties. In this work, a 2D semiconductor (2DS)/α‐In2Se3/metal FTJ structure is proposed that combines a semiconductor ferroelectric material and a semiconducting electrode. The incorporation of 2DS not only enhances the barrier height modulation but also provides an effective approach to mitigate the thermionic current leakage. Notably, the proposed MoS2/α‐In2Se3/Ti FTJs exhibit both room‐temperature negative differential resistance (NDR) effect and high tunnel electroresistance (TER) exceeding 104 simultaneously. Furthermore, the versatility of this structure extends to several 2DS (including MoS2, PdSe2, and SnSe2) and graphene electrodes to rationalize both tunneling and thermionic current transport mechanisms. The proposed 2DS/α‐In2Se3/metal FTJs present great superiority over existing structures in terms of robustness, temperature independence, high TER, and versatility for various potential application scenarios.

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Extraordinary tunnel electroresistance in layer-by-layer engineered van der Waals ferroelectric tunnel junctions

Cited by 10 publications

References 37 publications

Memory and Synaptic Devices Based on Emerging 2D Ferroelectricity

Memory and Synaptic Devices Based on Emerging 2D Ferroelectricity

Determining the twist angle of stacked MoS₂ layers using machine learning‐assisted low‐frequency interlayer Raman fingerprints

Robust Giant Tunnel Electroresistance and Negative Differential Resistance in 2D Semiconductor/α‐In₂Se₃ Ferroelectric Tunnel Junctions

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Extraordinary tunnel electroresistance in layer-by-layer engineered van der Waals ferroelectric tunnel junctions

Cited by 10 publications

References 37 publications

Memory and Synaptic Devices Based on Emerging 2D Ferroelectricity

Memory and Synaptic Devices Based on Emerging 2D Ferroelectricity

Determining the twist angle of stacked MoS2 layers using machine learning‐assisted low‐frequency interlayer Raman fingerprints

Robust Giant Tunnel Electroresistance and Negative Differential Resistance in 2D Semiconductor/α‐In2Se3 Ferroelectric Tunnel Junctions

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Determining the twist angle of stacked MoS₂ layers using machine learning‐assisted low‐frequency interlayer Raman fingerprints

Robust Giant Tunnel Electroresistance and Negative Differential Resistance in 2D Semiconductor/α‐In₂Se₃ Ferroelectric Tunnel Junctions