Self-Heating Characterization of $\beta$ -Ga<sub>2</sub>O<sub>3</sub> Thin-Channel MOSFETs by Pulsed ${I}$ –${V}$  and Raman Nanothermography

Blumenschein, Nicholas A.; Moule, Taylor; Dalcanale, Stefano; Mercado, Elisha J M; Singh, Manikant; Pomeroy, James W.; Kuball, Martin; Wagner, G.; Paskova, Tania; Muth, John F.; Chabak, Kelson D.; Moser, Neil; Jessen, Gregg H.; Heller, Eric R.; Miller, Norman N.; Green, Andrew J.; Popp, Andreas; Crespo, A.; Leedy, Kevin D.; Lindquist, Miles

doi:10.1109/ted.2019.2951502

Cited by 21 publications

(12 citation statements)

References 34 publications

(40 reference statements)

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“…The lack of this data makes it difficult to compare Ga 2 O 3 with commercial device technologies (e.g., Si, SiC, GaN) and evaluate the application space of Ga 2 O 3 devices. Some recent works characterized the channel (or junction) temperatures in Ga 2 O 3 devices [12]- [15] and studied different approaches to lower device temperatures, e.g., heterogenous integration [16]- [20] and substrate thinning [21]. However, all of these devices have small areas with a current much lower than 1 Amp, and none of these devices are packaged.…”

Section: Introductionmentioning

confidence: 99%

Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging

Wang

Xiao

Knoll

et al. 2021

IEEE Electron Device Lett.

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The low thermal conductivity of Ga 2 O 3 has arguably been the most serious concern for Ga 2 O 3 power and RF devices. Despite many simulation studies, there is no experimental report on the thermal resistance of a large-area, packaged Ga 2 O 3 device. This work fills this gap by demonstrating a 15-A double-side packaged Ga 2 O 3 Schottky barrier diode (SBD) and measuring its junctionto-case thermal resistance (R θJC ) in the bottom-side-and junction-side-cooling configurations. The R θJC characterization is based on the transient dual interface method, i.e., JEDEC 51-14 standard. The R θJC of the junction-and bottom-cooled Ga 2 O 3 SBD was measured to be 0.5 K/W and 1.43 K/W, respectively, with the former R θJC lower than that of similarly-rated commercial SiC SBDs. This low R θJC is attributable to the heat extraction directly from the Schottky junction instead of through the Ga 2 O 3 chip. The R θJC lower than that of commercial SiC devices proves the viability of Ga 2 O 3 devices for high-power applications and manifest the significance of proper packaging for their thermal management.

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Section: Introductionmentioning

confidence: 99%

Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging

Wang

Xiao

Knoll

et al. 2021

IEEE Electron Device Lett.

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“…To calculate temperature, a 1 μm diameter domain probe adjacent to the drain side of the gate edge (Figure 8b,c) was used to mimic the results of Raman measurements in the literature. 50,51 It should also be noted that while the singlechannel model represented the full device geometry, in order to in these references reasonably agree with the SSTR results for the composite substrate. Figure 8d shows a comparison of the simulation results for the single-channel homoepitaxial device and the device integrated with the composite substrate.…”

Section: ■ Results and Discussionmentioning

confidence: 77%

“…The homoepitaxial 6-finger device exhibits an extremely high device thermal resistance, which is ∼2.3 times higher than that of a single-finger device due to thermal crosstalk among adjacent channel regions dissipating heat. 55 However, if the composite substrate is utilized, heat dissipation is remarkably improved, and the resulting device thermal resistance is reduced from ∼370 mm•K/W for the homoepitaxy case to ∼42 mm•K/W, which is far lower than other Ga 2 O 3 FETs reported in the literature 51 and comparable to GaN-on-Si multifinger devices. 56 These results indicate that implementing a high heat transfer performance composite substrate will be essential for cooling practical multifinger lateral FETs or reducing the device thermal resistance to a manageable level once the device technology matures.…”

Section: ■ Results and Discussionmentioning

confidence: 91%

Ga₂O₃-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics

Song

Shoemaker

Leach

et al. 2021

ACS Appl. Mater. Interfaces

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β-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG) semiconductor (E G ∼ 4.8 eV), which promises generational improvements in the performance and manufacturing cost over today’s commercial wide bandgap power electronics based on GaN and SiC. However, overheating has been identified as a major bottleneck to the performance and commercialization of Ga2O3 device technologies. In this work, a novel Ga2O3/4H-SiC composite wafer with high heat transfer performance and an epi-ready surface finish has been developed using a fusion-bonding method. By taking advantage of low-temperature metalorganic vapor phase epitaxy, a Ga2O3 epitaxial layer was successfully grown on the composite wafer while maintaining the structural integrity of the composite wafer without causing interface damage. An atomically smooth homoepitaxial film with a room-temperature Hall mobility of ∼94 cm2/Vs and a volume charge of ∼3 × 1017 cm–3 was achieved at a growth temperature of 600 °C. Phonon transport across the Ga2O3/4H-SiC interface has been studied using frequency-domain thermoreflectance and a differential steady-state thermoreflectance approach. Scanning transmission electron microscopy analysis suggests that phonon transport across the Ga2O3/4H-SiC interface is dominated by the thickness of the SiN x bonding layer and an unintentionally formed SiO x interlayer. Extrinsic effects that impact the thermal conductivity of the 6.5 μm thick Ga2O3 layer were studied via time-domain thermoreflectance. Thermal simulation was performed to estimate the improvement of the thermal performance of a hypothetical single-finger Ga2O3 metal–semiconductor field-effect transistor fabricated on the composite substrate. This novel power transistor topology resulted in a ∼4.3× reduction in the junction-to-package device thermal resistance. Furthermore, an even more pronounced cooling effect is demonstrated when the composite wafer is implemented into the device design of practical multifinger devices. These innovations in device-level thermal management give promise to the full exploitation of the promising benefits of the UWBG material, which will lead to significant improvements in the power density and efficiency of power electronics over current state-of-the-art commercial devices.

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“…Self-heating of the device die results in heterogeneous temperature distribution and may create hot spots on the die [32], [33]. This should be considered during the design; and if the device is operating close to the specified maximum temperature, a safety margin needs to be taken into consideration.…”

Section: A Trip Case Temperature Versus Operating Pointmentioning

confidence: 99%

Overtemperature Protection Circuit for GaN Devices Using a di/dt Sensor

Hedayati

Wang

Dymond

et al. 2021

IEEE Trans. Power Electron.

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Power semiconductor devices have maximum junction temperature limits, but it is not straightforward to sense or infer temperature inside sealed devices in running converters. One method is to observe electrical behavior that is known to be temperature dependent. For example, in some gallium nitride (GaN) power semiconductor devices, the maximum slope of the device current at turn-ON has been shown to reduce as the junction temperature increases. This article demonstrates the first noncontact overtemperature protection circuit for GaN power devices that exploits this effect and overcomes the complication that this inverse proportionality is affected by load current. A variant of a previously reported magnetic field "Infinity Sensor," named after its figure-ofeight topology and high bandwidth (>200 MHz), measures di/dt. Using the sensor signal as the only input, a detection circuit finds peak di/dt, and a high-speed integrator derives instantaneous load current. The reference voltage for the decision-making part of the circuit is automatically adjusted as a function of load current, in order to counteract the dependence of di/dt on load current. Experimental results on a 400 V, 2 kW buck converter show the protection circuit successfully activating within ±5°C of a preprogrammed junction temperature setting, independently of load current, for settings of 100, 120, and 140°C. Index Terms-Gallium Nitride (GaN), indirect temperature sensing, overtemperature protection, temperature-sensitive electrical parameters (TSEPs), turn-ON di/dt, wideband gap. I. INTRODUCTIONP ROTECTION circuits are typically necessary to make a power converter robust, increase functionality, and achieve sufficient reliability [1]-[3]. In particular, the control scheme of the converter should be capable of protecting the switches against overtemperature. A general practice in the industry is to place temperature sensing chips on the board, as close as possible to the switching devices, or, in systems using modules, the modules will often include a thermistor attached to the substrate.

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Self-Heating Characterization of $\beta$ -Ga₂O₃ Thin-Channel MOSFETs by Pulsed ${I}$ –${V}$ and Raman Nanothermography

Cited by 21 publications

References 34 publications

Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging

Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging

Ga₂O₃-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics

Overtemperature Protection Circuit for GaN Devices Using a di/dt Sensor

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Self-Heating Characterization of $\beta$ -Ga2O3 Thin-Channel MOSFETs by Pulsed ${I}$ –${V}$ and Raman Nanothermography

Cited by 21 publications

References 34 publications

Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging

Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging

Ga2O3-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics

Overtemperature Protection Circuit for GaN Devices Using a di/dt Sensor

Contact Info

Product

Resources

About

Self-Heating Characterization of $\beta$ -Ga₂O₃ Thin-Channel MOSFETs by Pulsed ${I}$ –${V}$ and Raman Nanothermography

Ga₂O₃-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics