The incorporation of Ge into liquid phase epitaxial GaAs is investigated as a function of the growth temperature (725 to 1025 °C), the substrate orientation ((111) A, (111) B), and the mole fraction x Ge1 of Ge in the liquid phase (0.2 to 20 at%) The Ge content in the solid phase depends linearly on x Ge1 and increases slightly with rising growth temperature. No influence of the substrate orientation on the incorporation of Ge is found.
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