1978
DOI: 10.1016/0038-1098(78)90297-1
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Electrical properties of n-type CuInSe2 single crystals

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Cited by 77 publications
(6 citation statements)
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“…[7][8][9][10][11][12] These reported values are close to the present results found in A-type samples. [7][8][9][10][11][12] These reported values are close to the present results found in A-type samples.…”
Section: Carrier Removal By Electron Irradiationsupporting
confidence: 89%
“…[7][8][9][10][11][12] These reported values are close to the present results found in A-type samples. [7][8][9][10][11][12] These reported values are close to the present results found in A-type samples.…”
Section: Carrier Removal By Electron Irradiationsupporting
confidence: 89%
“…These defect concentrations are considerably higher than the donor and acceptor concentrations determined from Hall effect (NEUMANN, TOMLINSON 1986; NEUMANN et al 1978NEUMANN et al ,1983; WASIM) and optical absorption data (NEUMANN et al 1994; RINCON, BELLABARBA) or from deep level transient spectra (LI, SHIH; MOLLER, RODAK). In principle, to explain this discrepancy between the total defect concentrations derived from ion channeling data and the donor and acceptor concentrations determined from analyses of other measurements it can be argued that the assumption of ion dechanneling due to randomly distributed point defects alone is incorrect.…”
Section: Comparison With Experimentsmentioning
confidence: 92%
“…Positron annihilation measurements (KLUIN, MOLLER) and analyses of X-ray diffraction data (ZAHN, PAUFLER) revealed the presence of both types of cation vacancies and of Incu antisite defects in these crystals, and rough estimates of the respective defect concentrations have been given by these researchers. On the other hand, there are numerous experimental results concerning donor and acceptor concentrations in CuInSe, that have been determined from analyses of the temperature dependence or carrier concentrations of carrier mobilities (NEUMANN, TOMLINSON 1986;NEUMANN et al 1978NEUMANN et al , 1983WASIM), of defect induced contributions to optical absorption spectra (NEUMANN et al 1994;RINCON, BELLABARBA) or of deep level transient spectra (HANAK et al; Lr, SHIH; MOLLER, RODAK). However, these methods give only the concentration of those defects that are active in the specific physical effect investigated.…”
Section: Introductionmentioning
confidence: 99%
“…Copper-containing ternary chalcogenides CuInS 2 , CuInSe 2 have drawn much attention as potential materials for solar cells [1][2][3][4][5][6][7] with large conversion efficiency. To improve the physical properties of CuInS 2 and CuInSe 2 , their interaction with other chalcogenides is discussed.…”
Section: Introductionmentioning
confidence: 99%