Epitaxial layers of CuInSe2 on GaAs

Schümann, B.; Georgi, Christoph; Tempel, A.; Kühn, G.; Nam, Nguyen Van; Neumann, H.; Hörig, W.

doi:10.1016/0040-6090(78)90253-5

Cited by 76 publications

(5 citation statements)

References 17 publications

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“…This EA-value is in good accordance with that suggested from the absorption spectrum of sample 2 (see previous section). Furthermore, the existence of such a deep acceptor state has been proved by electrical measurements on p-type CuInSe, thin films [9] which supports our model for the interpretation of the photoconductivity spectra. Finally, we have determined the temperature coefficient dE,ldT of the gap energy E, in CuInSe, from photovoltage spectra in the interband transition region.…”

Section: Photoconductimtysupporting

confidence: 81%

Influence of impurities and free carriers on the optical properties of CuInSe2

Sobotta

Neumann

Riede

et al. 1980

Phys. Stat. Sol. (a)

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As‐grown n‐type CuInSe2 single crystals are investigated by electrical, optical transmittance and reflectance, and photoconductivity measurements. It is established that two donor states with ionization energies of (7 ± 1) meV and (225 ± 5) meV and one deep acceptor state with an ionization energy of about 400 meV are simultaneously present in the crystals. The observed absorption due to free electrons can be understood in terms of the scattering mechanisms known to be important in n‐type CuInSe2. The temperature coefficient of the gap energy is found to be dEg/dT = − (1.6 ± 0.3) × 10−4 eV/K from photovoltage measurements.

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Section: Photoconductimtysupporting

confidence: 81%

Influence of impurities and free carriers on the optical properties of CuInSe2

Sobotta

Neumann

Riede

et al. 1980

Phys. Stat. Sol. (a)

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“…9. The important effect of the chemical growth conditions on the freeze out in CIS can be linked to the variety in freeze out behavior in different experimental studies 9,49,50 .…”

Section: Resultsmentioning

confidence: 99%

Native point defects in CuIn_1−xGa_xSe₂: hybrid density functional calculations predict the origin of p- and n-type conductivity

Bekaert

Saniz

Partoens

et al. 2014

Phys. Chem. Chem. Phys.

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“…Due to the high tolerance to stoichiometry variations it is possible to adjust the bandgap from 1.04 eV (CuInSe 2 ) to 1.68 eV (CuGaSe 2 ) to the solar spectrum by changing the Ga content in CIGS absorbers. [3] In the past many efforts have been paid to understand the material properties of CuInSe 2 [4][5][6][7] and CuInS 2 [8][9][10][11] but less is still known about CuGaSe 2 (CGS). CGS is a promising material especially for tandem devices based on CIGS.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial CuGaSe₂ Thin Films − Removal of Cu_2−xSe Secondary Phase From Film Surface

Popp

Pettenkofer

2017

Physica Status Solidi (b)

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Cu‐rich CuGaSe2 (CGS) thin layers were prepared on GaAs (100) and stepped GaAs (111)A substrates by molecular beam epitaxy (MBE). The presence of a Cu/Cu2−xSe binary phase was observed and verified by XPS/UPS. By annealing the CGS samples subsequently at 600 °C growth temperature for 10 min, the secondary phase was removed while the Cu/Ga ratio decreased to a near stoichiometric value. Thus, the annealing step causes a reformation of the surface and surface structure, which could also be observed by LEED. Thereby the prior (4 × 2) reconstruction of the zinc blende order for the CGS [001] direction becomes sharper and more pronounced after the annealing step. For the [112] direction a (1 × 1) chalcopyrite reconstruction prior to the annealing step was changed into a clear (3 × 1) reconstruction after annealing the sample.

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Epitaxial layers of CuInSe2 on GaAs

Cited by 76 publications

References 17 publications

Influence of impurities and free carriers on the optical properties of CuInSe2

Influence of impurities and free carriers on the optical properties of CuInSe2

Native point defects in CuIn_1−xGa_xSe₂: hybrid density functional calculations predict the origin of p- and n-type conductivity

Epitaxial CuGaSe₂ Thin Films − Removal of Cu_2−xSe Secondary Phase From Film Surface

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Epitaxial layers of CuInSe2 on GaAs

Cited by 76 publications

References 17 publications

Influence of impurities and free carriers on the optical properties of CuInSe2

Influence of impurities and free carriers on the optical properties of CuInSe2

Native point defects in CuIn1−xGaxSe2: hybrid density functional calculations predict the origin of p- and n-type conductivity

Epitaxial CuGaSe2 Thin Films − Removal of Cu2−xSe Secondary Phase From Film Surface

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Product

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Native point defects in CuIn_1−xGa_xSe₂: hybrid density functional calculations predict the origin of p- and n-type conductivity

Epitaxial CuGaSe₂ Thin Films − Removal of Cu_2−xSe Secondary Phase From Film Surface