Properties of liquid phase epitaxial Ge-doped GaAs

Abstract

The incorporation of Ge into liquid phase epitaxial GaAs is investigated as a function of the growth temperature (725 to 1025 °C), the substrate orientation ((111) A, (111) B), and the mole fraction x Ge1 of Ge in the liquid phase (0.2 to 20 at%) The Ge content in the solid phase depends linearly on x Ge1 and increases slightly with rising growth temperature. No influence of the substrate orientation on the incorporation of Ge is found.

Empirical relationship between hall mobility and hole concentration in heavily doped p‐type GaAs

“…It cannot be excluded that much better agreement between theory and experiment can be achieved if the constant c in relation (9) is replaced by an appropriately defined scaling parameter. NEUMANN et al 1977). Germanium is an amphoteric dopant in GaAs and can result in either n-type or p-type conductivity of the compound in dependence on the growth method and growth conditions (DINGLE; HURLE; MAKITA et al; SOLOVEVA et al).…”

“…Germanium is an amphoteric dopant in GaAs and can result in either n-type or p-type conductivity of the compound in dependence on the growth method and growth conditions (DINGLE; HURLE; MAKITA et al; SOLOVEVA et al). In the case of liquid phase epitaxy doping with germanium gives rise to p-type conductivity (DINGLE; NEUMANN et al 1977;OELGART et al) but because of the amphoteric behaviour the degree of compensation can vary in dependence on the deposition conditions. From Figure 3 it is obvious that in most of the samples the upper bound of the degree of compensation is in the range k, = 0.15-0.50, but in some samples also k, values close to 0.1 and up to nearly 0.7 are observed.…”