Epitaxial layers of CuInTe<sub>2</sub> on GaAs

Neumann, H.; Nowak, E.; Schümann, B.; Tempel, A.; Kühn, G.

doi:10.1002/crat.19800150110

Cited by 27 publications

(9 citation statements)

References 24 publications

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“…There is only one recent report [9] of n-type behaviour in single 524 S. M. WASIN, G. S. PORRAS, and R. D. TOMLINSON la-* -vacuum annealed samples have been studied [5]. Three acceptor states have been identified [13] in epitaxial thin films of CuInTe, grown on GaAs substrates, similar states with similar ionization energies have been observed in other Cu-111-VI, compounds. Intrinsic defect compensation techniques, which have been used to produce n-type CuInSe, [la] and CuInS, [15] have not so far yielded n-type CuInTe,, only an increase in the resistivity has been observed [7].…”

Section: Introdnotionmentioning

confidence: 86%

Some electrical characteristics of Cu- and in-doped CuInTe2

Wasim

Porras²,

Tomlinson

1982

phys. stat. sol. (a)

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A detailed study is made on the effects of annealing CuInTe, single crystals, both in vacuum and in the presence of elemental Cu and In. The variation of hole concentration with temperature is established and the acceptor state ionization energy is found to lie between 10 and 14 meV. This energy state is associated with the In vacancy. Mobility data are obtained and explained by taking into account various carrier scattering mechanisms including, ionized impurity, acoustic mode phonon, and space charge effects. The valence band deformation potential is found to be 5.35 eV.Une etude detaillee a et6 faite sur lee effects de recuit des cristaux simples de CuInTe, dans le vide et en presence des Blements Cu et In. La variation de concentration des trous avec la tem-p6rature a et6 etabli6 et 1'6nergie d'ionisation des 6tats de l'accepteur a ete trouvee comprise entre 10 et 14 meV. Cet &at d'bnergie, eat associ6 avec la vacance de 1'6lement In. Les donees relatives h la mobilit6 ont ete obtenub e t expliqueeS en prenant en consideration les differents mechanismes de dispersion des porteurs de charges y compris les impuretee ionishs, les phonons de mode acoutique et les effets d'bpace de charge. Le potentiel de deformation de la bande de valence est trouv6 egal a 5,35 eV. crystals, thin p-type films annealed in vacuum have been converted to n-type [lo].From electroreflectance data the band gap is reported [ll] to be 1.06 eV at 300 K and from an infrared study the effective hole masses are found to be my@, = 0.85 and mt/m, = 0.66 [12]. Some thermal and electrical properties of as-grown and l) Merida 5101, Venezuela. 3) Salford M5 4WT, England. a) On sabbatical leave at the University of Salford. 34 physic8 (a) 1112

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Section: Introdnotionmentioning

confidence: 86%

Some electrical characteristics of Cu- and in-doped CuInTe2

Wasim

Porras²,

Tomlinson

1982

phys. stat. sol. (a)

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“…Therefore, the promotion of CuIn 3 Te 5 -film crystallization is straightforward at lower temperatures compared to CuInSe 2 films. This notable feature of the films can relate to the physical properties of a relatively low epitaxial temperature (620 K) [9] and melting point (789 1C) [17] for CuInTe 2 . The peculiar lines of (1 1 0), (2 0 2) and (2 1 2) of the defect chalcopyrite CuIn 3 Te 5 were observed above 300 1C.…”

Section: Microstructural Propertiesmentioning

confidence: 99%

“…Several deposition methods for CuInTe 2 thin films have been reported so far, including a single-source evaporation [5,8,9], post annealing of Cu/In/Te stacked layers [6] and electrodeposition of Cu-In-Te based precursor layers [10].…”

Section: Introductionmentioning

confidence: 99%

Microstructural and optical properties of CuIn3Te5 thin films for solar cells

Mise

Nakada

2010

Solar Energy Materials and Solar Cells

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“…Compared to film (e), the A 1 (127) intensity decreased for the Cu-rich film (f). 9 Therefore, the l-p relationship in films with intermediate Cu/In ratios of 0.57-0.84 can be explained by the inclusion of a high mobility CuInTe 2 phase. 3(d).…”

Section: B Microstructural Propertiesmentioning

confidence: 98%

“…4,8,9 However, in a single-source process such as flash evaporation, it is difficult to control the chemical composition due to the higher volatility of In, Te x , and In x Te vapors 10 compared to that of Cu. 4,8,9 However, in a single-source process such as flash evaporation, it is difficult to control the chemical composition due to the higher volatility of In, Te x , and In x Te vapors 10 compared to that of Cu.…”

Section: Thin Filmsmentioning

confidence: 99%

Influence of copper to indium atomic ratio on the properties of Cu–In–Te based thin-film solar cells prepared by low-temperature co-evaporation

Mise

Nakada

2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The influence of copper to indium atomic ratio (Cu/In) on the properties of Cu–In–Te based thin films and solar cells was investigated. The films (Cu/In = 0.38–1.17) were grown on both bare and Mo-coated soda-lime glass substrates at 250 °C by single-step co-evaporation using a molecular beam epitaxy system. Highly (112)-oriented CuInTe2 films were obtained at Cu/In ratios of 0.84–0.99. However, stoichiometric and Cu-rich films showed a poor film structure with high surface roughness. The films consist of polyhedron-shaped grains, which are related to the coexistence of a Cu2−xTe phase, and significant evidence for the coexistence of the Cu2−xTe phase in the stoichiometric and Cu-rich films is presented. KCN treatment was performed for the films in order to remove the Cu2−xTe phase. The stoichiometric CuInTe2 thin films exhibited a high mobility above 50 cm2/V s at room temperature after the KCN treatment. A preliminary solar cell fabricated using a 1.4-μm-thick Cu-poor CuInTe2 thin film (Cu/In = 0.84, Eg = 0.988 eV) yielded a total-area efficiency of 2.10%. The photovoltaic performance of the cell was improved after long-term ambient aging in dark conditions.

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Epitaxial layers of CuInTe₂ on GaAs

Abstract: CuInTe, thin films were deposited onto semi-insulating (1 1l)A-oriented GaAs substrates by flash evaporation. Epitaxial growth was found in the substrate temperature range

Cited by 27 publications

References 24 publications

Some electrical characteristics of Cu- and in-doped CuInTe2

Some electrical characteristics of Cu- and in-doped CuInTe2

Microstructural and optical properties of CuIn3Te5 thin films for solar cells

Influence of copper to indium atomic ratio on the properties of Cu–In–Te based thin-film solar cells prepared by low-temperature co-evaporation

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Epitaxial layers of CuInTe2 on GaAs

Abstract: CuInTe, thin films were deposited onto semi-insulating (1 1l)A-oriented GaAs substrates by flash evaporation. Epitaxial growth was found in the substrate temperature range

Cited by 27 publications

References 24 publications

Some electrical characteristics of Cu- and in-doped CuInTe2

Some electrical characteristics of Cu- and in-doped CuInTe2

Microstructural and optical properties of CuIn3Te5 thin films for solar cells

Influence of copper to indium atomic ratio on the properties of Cu–In–Te based thin-film solar cells prepared by low-temperature co-evaporation

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Product

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Epitaxial layers of CuInTe₂ on GaAs