In this work, we design and simulate a new class AB second generation current conveyor (CCII) employing 32 nm technology node carbon nanotube field effect transistors (CNTFET). The performance of the proposed CNTFET based class AB CCII (CNTFET-CCII) has been optimized by altering the number of carbon nanotubes (CNTs) (N), CNT pitch (S), and CNT diameter (D CNT). The proposed CCII has been compared with the conventional CMOS-based class AB CCII (CMOS-CCII). The simulation study has revealed that in the proposed CCII, the voltage and current bandwidth (BW) have enhanced by two orders, terminal X resistance

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This paper presents five feature-enriched hardware-

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In this work, we design and simulate novel 32 nm carbon nanotube field effect transistor (CNTFET) as well as complementary metal oxide semiconductor (CMOS)‐based negative class AB second generation current conveyors (CC) (CNTFET‐CCII and CMOS‐CCII−). The comparative analyses of various performance measuring parameters of both these CCII's have been performed. A significant improvement in current and voltage bandwidths, terminal X and Y impedances at lesser total harmonic distortions and reduced power consumption have been observed in the proposed CNTFET‐based CCII− in comparison to its CMOS‐based counterpart. Further, a CNTFET‐based active grounded inductor (AGI) has been designed and simulated for the first time using the proposed CNTFET‐CCII− and our recently designed CNTFET‐CCII+ and has been compared with the CMOS‐based AGI. To validate the performance of the simulated AGI's, single input multi output current mode filter and third‐order high pass Butterworth filter have also been designed and simulated. The simulation results reveal that the performance of the CNTFET‐AGI‐based applications are close to ideal response with less power consumption and temperature insensitivity with reduced active chip die area of 0.16 μm2 and can be efficiently used for low voltage, low power, and high frequency applications.

In this paper, we present a new voltage-mode biquad filter that uses a six-terminal CMOS fully differential current conveyor (FDCCII). The FDCCII with only 23 transistors in its structure and operating at ± 1.5 V, is based on a class AB fully differential buffer. The proposed filter has the facility to tune gain, ωo and Q. A circuit division circuit (CDC) is employed to digitally control the FDCCII block. This digitally controlled FDCCII is used to realize a new reconfigurable fully-differential integrator and differentiator. We performed SPICE simulations to determine the performance of all circuits using CMOS 0.25 μm technology.

Programmable resistor and analog computational circuits are essential for many applications such as analog signal processing units, automatic gain control, neural, fuzzy and instrumentation systems. A high-performance programmable grounded resistor (PGR) using complementary metal oxide semiconductor (CMOS) technology is proposed in this paper. A highly linear CMOS resistor with equivalent resistance ranging from 9.4 to 1.5 k is obtained by cancelling the nonlinear term present in the current equation of an MOSFET working in the linear region. The proposed resistor operates on both positive as well as negative input voltage. The inherited features of PGR are simplicity, extensive control voltage range, wider bandwidth and low-power dissipation. Additionally, analog computational units such as multiplier, squarer and divider are also discussed as applications of the PGR. All circuits are implemented and simulated using TSMC 0.13 µm CMOS technology in SPICE. ARTICLE HISTORY