This paper presents a new current-mode single input multi output (SIMO) type biquad employing one voltage differencing transconductance amplifier (VDTA), two grounded capacitors and a single grounded resistor. The configuration realizes all basic filter functions (i.e. Low Pass (LP), High Pass (HP), Band Pass (BP), Notch (BR) and All Pass (AP)). The natural frequency (ω 0 ) and bandwidth (BW) are independently tunable. The workability of proposed configuration has been verified using SPICE simulation with TSMC CMOS 0.18 μm process parameters.
A new active circuit is proposed for the realisation of lossless grounded and floating inductance employing Voltage Differencing Differential Input Buffered Amplifiers (VD-DIBAs). The proposed grounded simulated inductance circuit employs two VD-DIBAs and a single-grounded capacitor whereas the floating simulated inductance circuit employs three VD-DIBAs and a grounded capacitor. The circuit for grounded inductance does not require any realization conditions whereas in case of floating inductance, only equality of two transconductances is needed. Some sample results demonstrating the applications of the new simulated inductors using VD-DIBAs have been given to confirm the workability of the new circuits.
An electronically controllable fully uncoupled explicit current-mode quadrature oscillator employing Voltage Differencing Transconductance Amplifiers (VDTAs) as active elements has been presented. The proposed configuration employs two VDTAs along with grounded capacitors and offers the following advantageous features 1) fully and electronically independent control of condition of oscillation (CO) and frequency of oscillation (FO); 2) explicit currentmode quadrature oscillations; and 3) low active and passive sensitivities. The workability of proposed configuration has been demonstrated by PSPICE simulations with TSMC CMOS 0.18 μm process parameters.
In this paper, the complementary charge-plasma (CP) based symmetrical-gate electron-hole bilayer (EHB) Tunnel Field-Effect Transistor (TFET) at a low operating voltage (≤0.5V) is introduced. Where, by using CP technique, the source/drain & EHB-channel is induced by depositing metal electrode with appropriate work function. Moreover, the immunity against random dopant fluctuations and the feasibility of a self-aligned process due to a symmetrical top/bottom gate arrangement without the need for a high thermal annealing process make the fabrication of the proposed EHB-TFET very reliable and efficient. Moreover, by implementing the Density Gradient Quantum Correction Model, the quantum confinement and its effect on confining the 2D electron-hole concentration are also corrected as the proposed device has a smaller channel thickness of 5 nm. The proposed device shows superior performance against almost all Si-based CP-TFETs with a higher ON-current of 47.33μA/μm, a smaller average subthreshold swing of 13.53mV/dec and a high ON-current to OFF-current ratio of 2.16×1013. This indicates that the proposed device is a promising candidate for future low-power applications
New Voltage Differencing Differential Input Buffered Amplifier (VD-DIBA) based lossless grounded and floating inductance simulation circuits have been proposed. The proposed grounded simulated inductance circuit employs a single VD-DIBA, one floating resistance and one grounded capacitor. The floating simulated inductance (FI) circuits employ two VD-DIBAs with two passive components (one floating resistance and one grounded capacitor). The circuit for grounded inductance does not require any realization conditions where as in case of floating inductance circuits, a single matching condition is needed. Simulation results demonstrating the applications of the new simulated inductors using CMOS VD-DIBAs have been included to confirm the workability of the new circuits.
New electronically-controllable lossless grounded and floating inductance simulation circuits have been proposed employing Voltage Differencing Transconductance Amplifiers (VDTA). The proposed grounded inductance (GI) circuit employs a single VDTA and one grounded capacitor whereas the floating inductance (FI) circuit employs two VDTAs and one grounded capacitor. The workability of the new circuits has been verified using SPICE simulation with TSMC CMOS 0.18 μm process parameters.
This paper proposes a new single resistancecontrolled sinusoidal oscillator (SRCO) which employs only onevoltage differencing current conveyor (VDCC), two groundedresistors and two grounded capacitors. The presented circuitconfiguration offers the following advantageous features (i)explicit current-mode output with independent control ofcondition of oscillation (CO) and frequency of oscillation (FO) (ii)low active and passive sensitivities and (iii) a very good frequencystability. The proposed structure can also be configured as (a)trans-admittance low pass filter and band pass filter and (b)quadrature oscillator. The validity of the proposed SRCO,quadrature oscillator and trans-admittance low pass filter andband pass filter has been verified by PSPICE simulations usingTSMC CMOS 0.18μm process model parameters.
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