CNTFET‐based active grounded inductor using positive and negative current conveyors and applications

Abstract

In this work, we design and simulate novel 32 nm carbon nanotube field effect transistor (CNTFET) as well as complementary metal oxide semiconductor (CMOS)‐based negative class AB second generation current conveyors (CC) (CNTFET‐CCII and CMOS‐CCII−). The comparative analyses of various performance measuring parameters of both these CCII's have been performed. A significant improvement in current and voltage bandwidths, terminal X and Y impedances at lesser total harmonic distortions and reduced power consumption have been observed in the proposed CNTFET‐based CCII− in comparison to its CMOS‐based counterpart. Further, a CNTFET‐based active grounded inductor (AGI) has been designed and simulated for the first time using the proposed CNTFET‐CCII− and our recently designed CNTFET‐CCII+ and has been compared with the CMOS‐based AGI. To validate the performance of the simulated AGI's, single input multi output current mode filter and third‐order high pass Butterworth filter have also been designed and simulated. The simulation results reveal that the performance of the CNTFET‐AGI‐based applications are close to ideal response with less power consumption and temperature insensitivity with reduced active chip die area of 0.16 μm2 and can be efficiently used for low voltage, low power, and high frequency applications.

Novel carbon nanotube field effect transistor based dual output second‐generation current conveyor: Design and applications

“…It is approximately between −0.15 to +0.15 V for CMOS‐DO‐CCII and −0.5 to +0.5 V for the CNTFET‐DO‐CCII as shown in Figure 6. The larger linearity range in the proposed CNTFET‐DO‐CCII attributed to better differential pair matching of CNTFETs, M1, M2, M5, and M6, along with the unity aspect ratio in the CNTFET‐DO‐CCII 22,27,28 …”

“…Both the BWs increase as D CNT increases. This is be attributed to the decrease in threshold voltage, which in turn increases the drive current of a CNTFET and hence the BWs 28 . Similarly, the X and Y port resistances decrease as D CNT increases, as shown in Figure 13C,D.…”

CNTFET Based Fully Differential First Order All Pass Filter

“…It is to be noted that FDFAPF circuits proposed in the technical literature [4,16,17,[19][20][21][22][23][24][25] utilize bulk semiconductor technology which faces several emerging issues due to continuous focus on device scaling in nano meter scale for further validation of Moore's law. These includes short channel effects, lithographic limitations, gate leakage, boron penetrations, high field effects, poly-silicon depletion and increased heat production etc [26,27]. There is an essential requirement to substitute the conventional bulk semiconductor technology with more reliable and robust circuit technology to work equally well at nanoscale.…”

“…Various devices architecture has been introduced recently, like CNTFET, FinFETs, double gate FET, strained Si FET etc [28]. Among these solutions, CNTFET is considered as a promising alternative for future extension of Moore's law due to its efficient electrostatic control, ballistic transport of charge carriers, large thermal conductivity, lesser parasitics, higher cutoff frequency, large drive current and low power dissipation to name a few [26][27][28]. Since introduction of CNTFET as an emerging device and better alternative of bulk semiconductor technology, limited work on CNTFET based circuit design has been carried out in analog filtering domain [10,18,26,27,29,30].…”

“…Among these solutions, CNTFET is considered as a promising alternative for future extension of Moore's law due to its efficient electrostatic control, ballistic transport of charge carriers, large thermal conductivity, lesser parasitics, higher cutoff frequency, large drive current and low power dissipation to name a few [26][27][28]. Since introduction of CNTFET as an emerging device and better alternative of bulk semiconductor technology, limited work on CNTFET based circuit design has been carried out in analog filtering domain [10,18,26,27,29,30]. This work aims to realize new APF topologies with compact circuit structures for low voltage, low power and high frequency fully differential applications.…”