Generation-type drain current transients in advanced ͑down to 50 nm gate length͒ floating-body, partially depleted silicon on insulator ͑SOI͒ metal oxide semiconductor field effect transistors ͑MOSFETs͒ are investigated by 2D numerical simulation in weak inversion operation. An original compact analytical model is derived for the pure transient weak inversion operation and validated on both elementary and realistic 2D structures. The proposed subthreshold transient compact model allows accurate prediction of the influence of the generation lifetime, surface velocity ͑or interface state density͒, oxide thickness, and substrate doping on the floating-body-related transient behavior and duration, which is essential for advanced transistor optimization and subsequent circuit applications. Moreover, our model is a unique, robust tool for the electrical characterization of submicrometer SOI transistors because it allows the carrier lifetime extraction independently of the channel carrier mobility and device effective gate length. Finally, the model is successfully used in high-temperature operation for drain current transient prediction and generation lifetime extraction.
Thorough investigations of the saturation phenomena in state-of-the-art HV Lateral DMOS architectures (L-DMOS and X-DMOS), based on 2D numerical simulation and on the new concept of intrinsic drain potential, VK, are presented The paper highlights the VK evolution in all operation regimes, analyses the corresponding complex quasi-saturation mechanisms and originally demonstrates that this key potential remains at a low-voltage and shows a marked maximum value at low Vc. A simple and accurate analytical modelling strategy, which is usable for any architecture specific bias-dependence of the drift region equivalent resistance is proposed based on the VK-concept. Very good model performances using a BSIM3v3 low-voltage model combined with the proposed intrinsic MOSFET strategy are reported
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.