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Articles you may be interested inModulation of flat-band voltage on H-terminated silicon-on-insulator pseudo-metal-oxide-semiconductor field effect transistors by adsorption and reaction events Silicon thickness fluctuation scattering dependence of electron mobility in ultrathin body silicon-on-insulator nmetal-oxide-semiconductor field-effect transistors Mobility comparison between front and back channels in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors by the front-gate split capacitance-voltage method ͑unpublished͔͒ that the film thickness strongly impacts the parameters extracted using the pseudo metal oxide semiconductor field effect transistor ͑pseudo-MOSFET͒ with the usual FET equations ͓S. Cristoloveanu and S. S. Li, Electrical Characterization of SOI Materials and Devices ͑Kluwer, Boston, MA, 1995͔͒. In this paper, we investigate the influence of top free-surface states on the pseudo-MOSFET characteristics by comparing passivated versus nonpassivated samples. The parameters of concern, investigated here, are carrier mobility, density of interface states, threshold ͑V T ͒, and flatband ͑V FB ͒ voltages. Based on systematic measurements and existing models ͓H. J. Hovel, Solid-State Electron. 47, 1311 ͑2003͔͒ for V T , V FB , and subthreshold slope, we show how the free-surface impact increases as the film thickness is reduced. Comparison of extracted results with simulated curves demonstrates that, in state-of-the-art ultrathin silicon on insulator structures, the preparation and properties of the free surface are no longer negligible.

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First results on formation of thin film GeOI structures by the Smart Cut T M technology are presented in this paper. Thin single crystal layers of Ge have been successfully transferred, via oxide bonding layer, onto standard Si substrates with diameters ranging from 100 to 200 mm. Compared to SOI manufacturing, the development of GeOI requires adaptation to the available germanium material, since the starting material can be either bulk Ge or an epitaxial layer. Some results will be presented for GeOI formation according to the different technological options. Germanium splitting kinetics will be discussed and compared to already published results. To show good quality of the GeOI structures, detailed characterization has been done by TEM cross sections for defect densities, interfaces abruptness and layers homogeneities evaluation. AFM was used for surface roughness measurements. These results help define procedures that are required to achieve large diameter high quality GeOI structures.

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