Self-Heating Characterization and Extraction Method for Thermal Resistance and Capacitance in HV MOSFETs

Anghel, Costin; Ionescu, Adrian M.; Hefyene, N.; Gillon, Renaud

doi:10.1109/led.2003.821669

Cited by 70 publications

(26 citation statements)

References 7 publications

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“…4, and compare these with thermally degraded curves obtained with the temperature dependent model parameters outlined above. The latter show the negative differential decrease in the drain-to-source current at higher drain-to-source voltages resulting from self-heating effects observed for LDMOS RF power transistors [1], [37].…”

Section: Device Characteristicsmentioning

confidence: 89%

A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors

Everett

Kearney

Rueda³

et al. 2011

IEEE Trans. Electron Devices

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Abstract-A new quasi-two-dimensional (Q2D) model for laterally diffused MOS (LDMOS) RF power transistors is described in this paper. We model the intrinsic transistor as a series PHV-NHV network, where the regional boundary is treated as a revere biased p+/n diode. A single set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a "current-driven" form and specific device features are modeled without having to solve regional boundary node potentials using numerical iteration procedures within the model itself. This fast, process-oriented, nonlinear physical model is scalable over a wide range of device widths and accurately models DC and microwave characteristics. Index Terms-Field Effect transistor (FET), laterally diffused MOS (LDMOS), quasi-two-dimensional (Q2D), transistor model.

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Section: Device Characteristicsmentioning

confidence: 89%

A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors

Everett

Kearney

Rueda³

et al. 2011

IEEE Trans. Electron Devices

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“…Conventionally, in the electro-thermal modeling of high power transistors, the transistor thermal resistance is extracted at small biases and short pulses and it is assumed to be a constant depending only on the geometry of the transistor [7]. We anticipate that the bias-dependent transistor thermal resistance will play an important role in compact design of the chips and in high power circuits.…”

Section: Discussionmentioning

confidence: 99%

Temperature nonuniformity and bias-dependent thermal resistance in multi-finger MOS transistors

Shakouri

Wysocki

et al. 2008

2008 58th Electronic Components and Technology Conference

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In this paper, we study self-heating in a multi-finger MOSFET transistor. Different source-drain voltages are applied so that the transistor is in triode and saturation regimes. Thermoreflectance imaging technique was used to obtain high resolution thermal images of the transistor. This allowed us to obtain profiles with high spatial and temperature resolution. We verified that the actual size and shape of the heating source are modified as the biasing condition changes. Detailed comparison between the measurement results and analytical calculations proves that the thermal resistance of transistor is dependent on the biasing condition. It can change by a factor bigger than 5 for different drain-source voltages. Even in the saturation regime, the thermal resistance of the transistor can change by 50% as a function of bias.

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“…The former setup and the measured data will be discussed first. This setup is similar to that described in [58]. Fig.…”

Section: A1 Experimental Measurementsmentioning

confidence: 99%

Electrical degradation mechanisms of RF power GaAs PHEMTs

Villanueva

Alamos

Hisaka³

et al.

IEEE International Electron Devices Meeting 2003

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GaAs Pseudomorphic High-Electron Mobility Transistors (PHEMTs) are widely used in RF power applications. Since these devices typically operate at high power levels and under high voltage biasing, their electrical reliability is of serious concern. Previous studies have identified several distinct degradation phenomena in these devices, but a complete picture has yet to be formed.In this study, we have carried out a comprehensive study of the mechanisms of electrical degradation on a set of experimental RF power GaAs PHEMTs (non-commercial devices provided by our sponsor, Mitsubishi Electric). A wide variety of electrical stressing experiments employing different conditions (varying temperature, bias, environment) were performed on these devices in order to monitor their degradation with stressing.Our general observations showed several forms of degradation, the most concerning being an increase in the drain resistance RD and a reduction in maximum drain current Ima. Contrary to what is often claimed in the literature, our experiments indicated that these forms of degradation were not driven by impact-ionization or hot-electron effects. Instead, we found the degradation to be strongly correlated with temperature, stressing environment, and drain-gate bias, which were all consistent with a corrosion mechanism. Via materials analysis we were able to confirm that the degradation of both RD and I,., were due to surface corrosion on the drain side of the device, albeit at different specific locations. The increase in RD was attributed to oxidation on the n+GaAs ledge, while the reduction in I, was due to oxidation on the AlGaAs surface, closer to the gate.A recoverable negative shift in the threshold voltage VT and a permanent decrease in Rs were also observed during electrical stressing. The shift in VT was attributed to field-assisted tunneling of electrons out of traps under the gate, while the decrease in Rs was found to be consistent with recombination-induced annealing of defects on the source side of the device.

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Self-Heating Characterization and Extraction Method for Thermal Resistance and Capacitance in HV MOSFETs

Cited by 70 publications

References 7 publications

A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors

A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors

Temperature nonuniformity and bias-dependent thermal resistance in multi-finger MOS transistors

Electrical degradation mechanisms of RF power GaAs PHEMTs

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