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Abstract-In this paper, we present a multi-physics approach for the simulation of high-power RF and microwave transistors, in which electromagnetic, thermal, and nonlinear transistor models are linked together within a harmonic-balance circuit simulator. This approach is used to analyze a laterally diffused metal-oxide semiconductor (LDMOS) transistor that has a total gate width of 102 mm and operates at 2.14 GHz. The transistor die is placed in a metal-ceramic package, with bondwire arrays connecting the die to the package leads. The effects of three different gate bondpad layouts on the transistor efficiency are studied. Through plots of the spatial distributions of the drain efficiency and the time-domain currents and voltages across the die, we reveal for the first time unique interactions between the electromagnetic effects of the layout and the microwave behaviour of the large-die LDMOS power field-effect transistor (FET).Index Terms-Global modeling, electrothermal, laterallydiffused metal-oxide-semiconductor (LDMOS) transistor, power field-effect transistor (FET).

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Abstract-In this paper, we present a multi-physics approach for the simulation of high-power microwave transistors in which electromagnetic, thermal, and nonlinear transistor models are linked together within a harmonic-balance circuit simulator. This approach is used to analyze an LDMOS transistor operating at 2.14 GHz. The total gate width of the die is 102 mm, and the die is placed in a ceramic package and connected using bond-wire arrays at gate and drain. The effects of three different gate bondpad metallization on the transistor efficiency are studied. Plots of the spatial distribution of the drain efficiency, and time-domain current and voltage provide a unique insight and understanding of the behaviours induced by the different bond-pads.

Abstract-A new quasi-two-dimensional (Q2D) model for laterally diffused MOS (LDMOS) RF power transistors is described in this paper. We model the intrinsic transistor as a series PHV-NHV network, where the regional boundary is treated as a revere biased p+/n diode. A single set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a "current-driven" form and specific device features are modeled without having to solve regional boundary node potentials using numerical iteration procedures within the model itself. This fast, process-oriented, nonlinear physical model is scalable over a wide range of device widths and accurately models DC and microwave characteristics. Index Terms-Field Effect transistor (FET), laterally diffused MOS (LDMOS), quasi-two-dimensional (Q2D), transistor model.