InAs self-organized quantum dots inserted in InGaAs quantum well have been grown on GaAs substrates by molecular beam epitaxy. The lateral size of the InAs islands has been found to be approximately 1.5 times larger as compared to the InAs/GaAs case, whereas the island heights and surface densities were close in both cases. The quantum dot emission wavelength can be controllably changed from 1.1 to 1.3 μm by varying the composition of the InGaAs quantum well matrix. Photoluminescence at 1.33 μm from vertical optical microcavities containing the InAs/InGaAs quantum dot array was demonstrated.

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Terahertz detection by a one-dimensional dense array of field-effect transistors (FETs) is studied experimentally. Such terahertz detector demonstrates greatly enhanced responsivity without using supplementary antenna elements because a short-period grating formed by metal contact fingers of densely ordered transistors in the array serves as an effective antenna coupling incident terahertz radiation to the transistor channels. Asymmetrical position of the gate contact in each FET in the array enables strong photovoltaic response.

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