InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain

Kovsh, A. R.; Maleev, N. A.; Zhukov, A. E.; Mikhrin, S. S.; Васильев, А. П.; Shernyakov, Yu. M.; Maximov, M. V.; Livshits, D.; Ustinov, V. M.; Alfërov, Zh. I.; Ledentsov, N. N.; Bimberg, D.

doi:10.1109/mbe.2002.1037847

Cited by 11 publications

(17 citation statements)

References 3 publications

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“…(4)] increases and hence so does 1/η opt, th . This is in agreement with [14]- [16], where such nonmonotonic dependence on L was observed experimentally for QD lasers (cf. Fig.…”

Section: Carrier Density Internal Loss and Reciprocal Optical Efficsupporting

confidence: 92%

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Feasibility of conventional method of extracting internal loss and internal quantum efficiency in edge-emitting quantum dot lasers

Asryan

2006

Quantum Dots, Particles, and Nanoclusters III

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Feasibility is discussed of the conventional method of determining internal loss coefficient and internal quantum efficiency from a measured plot of the reciprocal slope efficiency versus the cavity length L in semiconductor edgeemitting quantum dot (QD) lasers. The limitations are imposed by the cavity-length-dependence of internal loss and quantum efficiency themselves. The effect of internal loss is quantitatively analyzed, which originates from the dependence of internal loss on the carrier density, with the latter being L-dependent. In short cavities, a plot of the reciprocal slope efficiency versus the cavity length can significantly deviate from a straight line; particularly, the reciprocal slope efficiency increases with reducing the cavity length in short cavities. This plot asymptotically approaches an inclined line only in long cavities. Correspondingly, only infinitely-long-cavity (no mirror loss) values of the internal loss coefficient and the internal quantum efficiency can be extracted using the standard procedure. These latter differ significantly from those in short-cavity devices, thus strongly limiting the practicality of the procedure. For L longer than several hundred microns, the limitations are strong in a single-QD-layer laser and moderate in a multiple-QD-layer laser.

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“…(4)] increases and hence so does 1/η opt, th . This is in agreement with [14]- [16], where such nonmonotonic dependence on L was observed experimentally for QD lasers (cf. Fig.…”

Section: Carrier Density Internal Loss and Reciprocal Optical Efficsupporting

confidence: 92%

“…1 in [15], and Fig. 2 in [16]). At the shortest cavity length, at which the lasing is attainable in the structure, the difference between the actual 1/η opt, th and that assuming α int, th = const (L) is at its maximum.…”

Section: Carrier Density Internal Loss and Reciprocal Optical Efficmentioning

confidence: 99%

Feasibility of conventional method of extracting internal loss and internal quantum efficiency in edge-emitting quantum dot lasers

Asryan

2006

Quantum Dots, Particles, and Nanoclusters III

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“…A dot-in-a-well structure (DWELL) is used to reach near 1.3 μm emission wavelength. Details on the growth can be found in [12]. The 4μm ridge was dry etched through the active region to provide strong index guiding of the optical mode and suppression of current spreading [13].…”

Section: Epitaxy and Device Structurementioning

confidence: 99%

Mode-Locked Quantum-Dot Lasers

Fiol

Arsenijević

Schmeckebier

et al. 2011

IEEE Winter Topicals 2011

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“…p-Doping of barrier layers between the QD layers prefills the hole states and is meant to speed up the recovery of the groundstate population and to provide low temperature sensitivity of the threshold current. Details on the growth can be found in [5]. The wafers were then processed into ridge waveguide edge emitters with a stripe width of 4 µm.…”

Section: Introductionmentioning

confidence: 99%