High-responsivity terahertz detection by on-chip InGaAs/GaAs field-effect-transistor array

Abstract

Terahertz detection by a one-dimensional dense array of field-effect transistors (FETs) is studied experimentally. Such terahertz detector demonstrates greatly enhanced responsivity without using supplementary antenna elements because a short-period grating formed by metal contact fingers of densely ordered transistors in the array serves as an effective antenna coupling incident terahertz radiation to the transistor channels. Asymmetrical position of the gate contact in each FET in the array enables strong photovoltaic response.

Transmission line theory of collective plasma excitations in periodic two-dimensional electron systems: Finite plasmonic crystals and Tamm states

“…In this model, both and are determined by Eqs. (11), (15), and (16) with 0 but only changes when the value of is varied.…”

“…The frequencies of 2D plasmons in semiconductor heterostructures conveniently fall in the THz region and can be easily tuned by changing the 2D electron density through an applied field effect. These features make 2D plasmons an excellent candidate to be used for frequency tunable THz detection [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18]. The predicted instabilities of 2D plasma waves interacting with incident THz EM radiation also provide opportunities for designing THz sources [19][20][21].…”

Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals

“…For the investigated devices, we calculate a fundamental plasmon frequency of ν (1) Pl = e 2 n (2D) b/(m * ε 0 ε r )/(2L G ) ≈150 GHz (carrier concentration n (2D) = 7 × 10 11 /cm 2 , barrier width b = 30 nm) using Eq. (1) from Popov et al [33]. This is much below both ν cr and the lowest investigated THz frequency of 1.3 THz.…”

Гигантский Эффект Выпрямления Терагерцового Излучения В Периодических Графеновых Плазмонных Структурах

“…Чувствительность выпрямления ТГц излучения на единицу площади структуры графенового детектора (300 А · мм/Вт) превышает более чем на 2 порядка величины чувствительность детектора на основе массива полевых транзисторов GaAs/AlGaAs [20] (для которо-го чувствительность на единицу площади составляет ∼ 1 А · мм/Вт).…”