1.3μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy

Ustinov, V. M.; Zhukov, A. E.; Maleev, N. A.; Kovsh, A. R.; Mikhrin, S. S.; Volovik, B. V.; Musikhin, Yu. G.; Shernyakov, Yu. M.; Maximov, M. V.; Tsatsul’nikov, A. F.; Ledentsov, N. N.; Alfërov, Zh. I.; Lott, James A.; Bimberg, D.

doi:10.1016/s0022-0248(01)01006-5

Cited by 72 publications

(21 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The material systems discussed for 1.3−μm light emission include the more traditional InGaAsP [1] and AlGaInAs [2,3] on InP, the more recently investigated InGaAs quantum dots [4][5][6] and low−bandgap GaInNAs on GaAs [7,8], as well as GaAsSb/GaAs [9,10] structures. As an alternative option, strain−compensated InAsP quantum wells separated by the tensile−strain InGaAsP barriers can be used in a VCSEL structure [11].…”

Section: Introductionmentioning

confidence: 99%

Investigation of temperature characteristics of modern InAsP/InGaAsP multi-quantum-well TJ-VCSELs for optical fibre communication

Piskorski¹,

Sarzała²,

Nakwaski³

2011

Opto-Electronics Review

View full text Add to dashboard Cite

Continuous-wave (CW) performance of modern 1.3-μm InAsP/InGaAsP multi-quantum-well (MQW) tunnel-junction vertical-cavity surface-emitting diode lasers (TJ-VCSELs) is investigated using our comprehensive self-consistent simulation model to suggest their optimal design for room and elevated temperatures. For increasing ambient temperatures, an increase in the VCSEL threshold current has happened to be mostly associated with the Auger recombination. Nevertheless, the InAsP/InGaAsP VCSELs have been found to exhibit encouraging thermal behaviour with the quite high value of maximal operating temperature of 350 K. It has been found that 5-μm devices seem to be the most optimal ones because they demonstrate both the room temperature (RT) threshold current equal to only 0.55 mA and maximum operating temperature equal to as much as 345 K. For these devices, the characteristic temperature T0 is equal to 92 K for 290–305 K, 51 K for 310–325 K and 29 K for 330–345 K. Therefore, the InAsP/InGaAsP VCSELs have been found to offer very promising performance both at room and elevated temperatures as sources of the carrier 1.3-μm wave in the fibre optical communication using silica fibres.

show abstract

Section: Introductionmentioning

confidence: 99%

Investigation of temperature characteristics of modern InAsP/InGaAsP multi-quantum-well TJ-VCSELs for optical fibre communication

Piskorski¹,

Sarzała²,

Nakwaski³

2011

Opto-Electronics Review

View full text Add to dashboard Cite

show abstract

“…How− ever, their output powers saturate at relatively low levels and therefore their performance is very limited. Hence in− stead of single−QD layers, stacks of several QD layers have been applied [7,8]. Currently, even several such stacks of QD layers are located within a laser active region [9,10].…”

Section: Introductionmentioning

confidence: 99%

“…Arsenide technology remains relatively cheap and easy to manufacture VCSELs and offers good−quality distributed− Bragg−reflector (DBR) arsenide mirrors as well as manage− able ways to create within their structures efficient radial electrical and optical confinements with Al x O y native−oxide apertures [8,11]. Besides, arsenide VCSELs are proven to ex− hibit very high reliability.…”

Section: Introductionmentioning

confidence: 99%

Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication

Piskorski

Wasiak

Sarzała

et al. 2009

Opto-Electronics Review

View full text Add to dashboard Cite

Room-temperature (RT) continuous-wave (CW) performance of modern 1300-nm oxide-confined In(Ga)As/GaAs quantum-dot (QD) vertical-cavity surface-emitting diode lasers (VCSELs) taking advantage of many QD sheets is investigated using our comprehensive self-consistent simulation model to suggest their optimal design. Obviously, quantum dots should be as uniform as possible and as dense as possible to ensure high enough optical gain. Besides, our simulation reveals that efficient and uniform current injection into VCSEL active regions necessary to enhance excitation of the desired fundamental LP01 mode is accomplished in the VCSEL configuration with the broad-area bottom contact and the ring upper one as well as with the oxide aperture localized within the first period of the upper p-type DBR. The doping of the DBR mirrors is chosen as a compromise between their high enough electrical conductivity and low enough free-carrier absorption. The oxide aperture is additionally introducing the radial optical waveguiding. Moreover, our analysis has been concluded that VCSEL active regions should be composed of at least 9 QD sheets to acquire efficient RT CW operation. Furthermore, rather longer optical cavities are recommended in this case because localization of QD sheets should be adjusted to the anti-node positions of the optical cavity standing wave.

show abstract

“…In modern GaAsbased VCSELs, it is usually carried out by oxide Al x O y apertures [2] created in AlAs-rich (AlGa)As layers by radial wet oxidation [3,4]. In such oxide-confined (OC) VCSELs [5][6][7][8], the apertures may influence both the radiation field [because of much lower (∼1.6) refractive index of Al x O y than those of semiconductor layers (over 3)] and current spreading (because of high electrical resistivity of Al x O y ).…”

Section: Introductionmentioning

confidence: 99%

Comparative analysis of lasing performance of oxide-confined and proton-implanted vertical-cavity surface-emitting diode lasers

Sarzała

Piskorski

2010

Appl. Phys. A

View full text Add to dashboard Cite

The comprehensive optical-electrical-thermalrecombination self-consistent VCSEL model is used to compare the performance of oxide-confined (OC) and protonimplanted (PI) VCSELs and to optimise their structures. Generally index-guided (IG) OC VCSELs demonstrate lower lasing thresholds whereas both gain-guided (GG) OC and PI ones manifest much better mode selectivity. Therefore, their either low-threshold IG or mode-selective GG versions may be intentionally used for different VCSEL applications. Lasing thresholds of OC IG VCSELs have been found to be very sensitive to the exact localisation of their thin oxide apertures, which should be shifted as close as possible towards the anti-node position. PI VCSELs, on the other hand, are simpler and cheaper in their manufacturing than OC ones. Although lower threshold currents are manifested by PI VCSELs with very thick implanted regions, lower threshold powers are achieved in these devices with much thicker upper unaffected layer used for the radial current flow from the ring contact towards the laser axis. Paradoxically poor thermal properties of PI VCSELs enable lower lasing thresholds of slightly detuned devices. To conclude, cheaper and mode-selective PI VCSELs may be used instead of OC ones in many of their applications provided ambient temperatures and laser outputs are not too high.

show abstract

1.3μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy

Cited by 72 publications

References 11 publications

Investigation of temperature characteristics of modern InAsP/InGaAsP multi-quantum-well TJ-VCSELs for optical fibre communication

Investigation of temperature characteristics of modern InAsP/InGaAsP multi-quantum-well TJ-VCSELs for optical fibre communication

Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication

Comparative analysis of lasing performance of oxide-confined and proton-implanted vertical-cavity surface-emitting diode lasers

Contact Info

Product

Resources

About