InAs∕InGaAs∕GaAs quantum dot lasers of 1.3  [micro sign]m range with high (88%) differential efficiency

Kovsh, A. R.; Maleev, N. A.; Zhukov, A. E.; Mikhrin, S. S.; Васильев, А. П.; Shernyakov, Yu. M.; Maximov, M. V.; Livshits, D.; Ustinov, V. M.; Alfërov, Zh. I.; Ledentsov, N. N.; Bimberg, D.

doi:10.1049/el:20020793

Cited by 145 publications

(78 citation statements)

References 6 publications

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“…In spite of these predictions most of the devices realized so far have shown a temperature dependence similar to the one obtained on InP based QWs for 1.3 m emission, with laser characteristic temperature T 0 smaller than 100 K in the 20-80°C interval. [3][4][5][6] Higher T 0 has been obtained in lasers based on p-doped QDs, but at the expense of higher room-temperature ͑RT͒ threshold current density. [7][8][9] To explain the temperature sensitivity of QD lasers, different mechanisms have been proposed in the literature.…”

Section: Introductionmentioning

confidence: 99%

Modeling the temperature characteristics of InAs/GaAs quantum dot lasers

Rossetti

Fiore

Sęk

et al. 2009

Journal of Applied Physics

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A systematic investigation of the temperature characteristics of quantum dot lasers emitting at 1.3 m is reported. The temperature dependence of carrier lifetime, radiative efficiency, threshold current, differential efficiency, and gain is measured, and compared to the theoretical results based on a rate equation model. The model accurately reproduces all experimental laser characteristics above room temperature. The degradation of laser characteristics with increasing temperature is clearly shown to be associated to the thermal escape of holes from the confined energy levels of the dots toward the wetting layer and the nonradiative recombination therein.

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Section: Introductionmentioning

confidence: 99%

Modeling the temperature characteristics of InAs/GaAs quantum dot lasers

Rossetti

Fiore

Sęk

et al. 2009

Journal of Applied Physics

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“…Though these results are still inferior compared to their GaInNAs QW counterparts [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] and In(Ga)As QD lasers [49][50][51][52][53], however, the results in this work indicate that GaInNAs QDs have potential for longwavelength semiconductor laser application. Further improvement and optimization in the GaInNAs QD material growth are on-going for better crystal quality, higher GaInNAs QD densities and longer wavelength.…”

Section: Resultsmentioning

confidence: 87%

“…Further improvement and optimization in the GaInNAs QD material growth are on-going for better crystal quality, higher GaInNAs QD densities and longer wavelength. In the present work, single GaInNAs QD layer has been adopted; while in the future, the limited modal gain in QD lasers can be partly alleviated by stacking several high quality QD layers [51,53]. Furthermore, our recent work has shown that by suppressing the lateral current spreading in broad area lasers, the RWG laser performance can be greatly improved [17].…”

Section: Resultsmentioning

confidence: 94%

Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

et al. 2006

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Self-assembled GaInNAs quantum dots (QDs) were grown on GaAs (001) substrate using solidsource molecular-beam epitaxy (SSMBE) equipped with a radio-frequency nitrogen plasma source. The GaInNAs QD growth characteristics were extensively investigated using atomic-force microscopy (AFM), photoluminescence (PL), and transmission electron microscopy (TEM) measurements. Self-assembled GaInNAs/GaAsN single layer QD lasers grown using SSMBE have been fabricated and characterized. The laser worked under continuous wave (CW) operation at room temperature (RT) with emission wavelength of 1175.86 nm. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is~1.05 kA/cm 2 from a GaInNAs QD laser (50 · 1,700 lm 2 ) at 10°C. High-temperature operation up to 65°C was demonstrated from an unbonded GaInNAs QD laser (50 · 1,060 lm 2 ), with high characteristic temperature of 79.4 K in the temperature range of 10-60°C.

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“…These include sub-monolayer deposition [60], low growth rate [61] and InGaAs overgrowth [62,63]. Recently it was found [64] that multiple layers (up to 10) of InAs/InGaAs/ GaAs quantum dots considerably enhance the optical gain of quantum dot lasers emitting around 1.3 lm. A differential efficiency as high as 88% has been achieved in these lasers.…”

Section: Quantum Dot Lasersmentioning

confidence: 99%

Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

Henini

2006

Nanoscale Res Lett

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One of the main directions of contemporary semiconductor physics is the production and study of structures with a dimension less than two: quantum wires and quantum dots, in order to realize novel devices that make use of low-dimensional confinement effects. One of the promising fabrication methods is to use selforganized three-dimensional (3D) structures, such as 3D coherent islands, which are often formed during the initial stage of heteroepitaxial growth in lattice-mismatched systems. This article is intended to convey the flavour of the subject by focussing on the structural, optical and electronic properties and device applications of self-assembled quantum dots and to give an elementary introduction to some of the essential characteristics.

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InAs∕InGaAs∕GaAs quantum dot lasers of 1.3 [micro sign]m range with high (88%) differential efficiency

Cited by 145 publications

References 6 publications

Modeling the temperature characteristics of InAs/GaAs quantum dot lasers

Modeling the temperature characteristics of InAs/GaAs quantum dot lasers

Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

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